Semiconductor Metal Compound Formation With In-Situ Oxide Reduction
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Solution Overview
Problem
The presence of oxides in metal silicides used in semiconductor structures increases resistance, leading to RC delay and reduced performance due to incomplete removal during manufacturing processes.
Innovation Solution
A method involving heat treatment with a reducing gas to convert metal layers into metal compound layers, reducing oxides and improving conductivity, thereby enhancing semiconductor performance while simplifying the manufacturing process by combining oxide removal and metal compound formation in a single step.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If heat treatment is performed to convert metal layer into metal compound layer, then metal compound formation is achieved, but oxide remains on surface and interface increasing resistance
Solution Approach 1:
The patent applies preliminary action by performing oxide removal through reducing gas treatment before the heat treatment that forms the metal compound layer. This preliminary removal of oxides (particularly at the metal-substrate interface and on the metal surface) prevents resistance increase during subsequent metal compound formation, thereby resolving the contradiction between achieving complete metal compound conversion and avoiding oxide-induced resistance increase.
2Manufacturing precision
If multiple process steps are used to remove oxide and form metal compound, then oxide removal and metal compound formation are achieved, but manufacturing complexity increases
Solution Approach 1:
The patent merges the oxide removal step and the metal compound formation step into a single integrated heat treatment process. By introducing reducing gas during the heat treatment, both oxide reduction and metal-silicon compound formation occur simultaneously in one process step, thereby achieving the desired manufacturing precision while reducing process complexity and improving manufacturing efficiency.
3Object-affected harmful factors
If reducing gas is introduced during heat treatment, then oxide is reduced and resistance decreases, but process complexity increases
Solution Approach 1:
The patent combines oxide reduction and metal compound formation into a single heat treatment step by introducing reducing gas during the heat treatment process. This merging approach achieves oxide reduction (improving conductivity) without requiring separate reduction and formation steps, thereby minimizing process complexity while achieving the desired electrical performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the resistance of semiconductor structures, enhances signal transmission speed, and improves overall performance by effectively removing oxides and forming low-resistance metal compound layers, thus addressing the limitations of existing technologies.
Implementation Method 1
performing heat treatment on the base during which a reducing gas is introduced, and the metal layer is converted into a metal compound layer after the heat treatment
Data Source
AI summary
Some examples of this disclosure relate to the field of the semiconductor technology, and disclose a method for manufacturing a semiconductor structure. The method for manufacturing of the semiconductor structure includes: providing a base, wherein the base includes a metal layer and an oxide located in the metal layer or on a surface of the metal layer; and performing heat treatment on the base, wherein a reducing gas is introduced during the heat treatment, and the metal layer is converted into a metal compound layer after the heat treatment. This disclosure can improve the performance of the semiconductor structure.