Semiconductor Conductive Member Covering Layer Ringing Suppression

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Solution Overview

Problem

Semiconductor devices experience ringing issues due to increased switching speed, leading to electromagnetic interference noise that affects peripheral device operation.

Innovation Solution

A semiconductor device with a conductive member made of a first material, covered by a second material with higher magnetic permeability, electrical resistivity, or dielectric loss tangent, which suppresses ringing by attenuating alternating currents and simplifying the snubber circuit.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If the switching speed of the semiconductor element is increased to improve productivity, then the switching speed is improved, but ringing occurs in the main circuit current causing electromagnetic interference noise

Engineering Contradiction:
Improveswitching speedVSAvoidringing and electromagnetic interference noise
Core Design Contradiction:
ProductivityVSObject-generated harmful factors

Solution Approach 1:

A covering layer made of a second material is introduced as an intermediary between the conductive member (first material) and the surrounding environment. This covering layer acts as a mediator to suppress ringing by providing controlled electrical resistivity, magnetic permeability, or dielectric loss properties that dampen oscillations in the main circuit current without interfering with the high-speed switching function of the semiconductor element.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The invention changes the physical parameters of the covering layer material to achieve ringing suppression. Specifically, the second material is selected to have electrical resistivity of 10^-6 to 10^6 Ω·m, magnetic permeability of 1 to 1000, or dielectric loss tangent of 0.001 to 10, depending on the desired suppression mechanism. By adjusting these material parameters, the covering layer can effectively dampen high-frequency oscillations while allowing the semiconductor element to operate at high switching speeds.

Inventive Principle:
Principle #35Parameter changes

2Object-generated harmful factors

If a covering layer with specific material properties is added to suppress ringing, then electromagnetic interference is reduced, but the device complexity increases

Engineering Contradiction:
Improveelectromagnetic interference noiseVSAvoidstructure complexity
Core Design Contradiction:
Object-generated harmful factorsVSDevice complexity

Solution Approach 1:

The covering layer is designed to perform multiple functions simultaneously: it suppresses ringing through its electrical resistivity, magnetic permeability, or dielectric loss properties; it provides electrical insulation for safety; and it can serve as a protective barrier. By consolidating these functions into a single component, the invention avoids the need for separate snubber circuits or shielding structures, thereby limiting the increase in device complexity.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The invention employs composite material structures where the covering layer may consist of multiple layers with different material properties optimized for specific suppression mechanisms. For example, a multi-layer configuration can combine materials with different electrical resistivities or magnetic permeabilities to achieve both ringing suppression and electrical insulation functions, reducing the need for additional components and simplifying the overall device structure.

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively reduces ringing, enhancing the reliability and operation of semiconductor devices by minimizing electromagnetic interference.

Implementation Method 1

having an electrical resistivity higher than the first material

Methodology Applied
Scientific EffectElectrical resistivity: Electrical Resistance

Implementation Method 2

having a magnetic permeability higher than the first material

Methodology Applied
Scientific EffectMagnetic permeability: Magnetic Field

Implementation Method 3

having a dielectric loss tangent larger than zero

Methodology Applied
Scientific EffectDielectric loss: Dielectric Heating

Data Source

PatentUS20230146758A1Semiconductor device
Publication Date: 2023.05.11 ROHM CO LTD
  • US20230146758A1 patent drawing
  • US20230146758A1 patent drawing
  • US20230146758A1 patent drawing

AI summary

A semiconductor device includes at least one semiconductor element having a switching function; a conductive member that forms a path of a current switched by the semiconductor element, and that is made of a first material; and a covering layer that covers at least a portion of the conductive member, and that is made of a second material. The second material satisfies at least one of the following three requirements: (a) having a magnetic permeability higher than the first material; (b) having an electrical resistivity higher than the first material; and (c) having a dielectric loss tangent larger than zero.