Semiconductor Structure Conductive Feature Resistance Reduction
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Solution Overview
Problem
As feature sizes in semiconductor structures decrease, the electrical resistance of electrically conductive lines increases due to scattering of charge carriers at interfaces between conductive lines and other components, leading to signal propagation delays and heat losses.
Innovation Solution
Incorporating a layer of semiconductor material between the electrically insulating material and the conductive feature, forming a Schottky or ohmic barrier at their interface to reduce electron scattering by creating space charges that direct charge carriers back into the conductive feature, thereby reducing resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If feature sizes in semiconductor structures decrease, then integration density increases, but electrical resistance of conductive lines increases due to charge carrier scattering at interfaces
Solution Approach 1:
A semiconductor layer is introduced as an intermediary between the conductive line and the insulating layer. This intermediate semiconductor layer creates a Schottky or ohmic barrier at its interface with the conductive line, forming space charges that repel charge carriers back into the conductive feature, thereby reducing electron scattering and electrical resistance while allowing continued scaling for higher integration density
Solution Approach 2:
The invention changes the material parameter at the interface between the conductive line and insulating layer by introducing a semiconductor material with different electrical properties. This parameter change creates a barrier effect that modifies charge carrier behavior, reducing scattering and resistance without affecting the geometric scaling needed for integration density
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively decreases the likelihood of electron scattering at interfaces, lowering the electrical resistance of conductive lines and minimizing signal delays and heat losses.
Implementation Method 1
forming a Schottky or ohmic barrier at their interface to reduce electron scattering by creating space charges that direct charge carriers back into the conductive feature
Implementation Method 2
forming a Schottky or ohmic barrier at their interface to reduce electron scattering by creating space charges that direct charge carriers back into the conductive feature
Implementation Method 3
the electrical resistance of electrically conductive lines increases due to scattering of charge carriers at interfaces between conductive lines and other components
Data Source
AI summary
A semiconductor structure comprises a semiconductor substrate. A layer of an electrically insulating material is formed over the semiconductor substrate. An electrically conductive feature is formed in the layer of electrically insulating material. A first layer of a semiconductor material is formed between the electrically conductive feature and the layer of electrically insulating material.