Semiconductor Conductive Line Spacing and Dielectric Optimization
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Solution Overview
Problem
The semiconductor industry faces challenges in achieving high-density integration and low power consumption while maintaining high performance, particularly in non-volatile memory devices, due to issues with data storage and information writing/erasing reliability.
Innovation Solution
A method of fabricating a semiconductor device involving a substrate with distinct regions, where conductive lines are spaced apart at different intervals, and dielectric layers are formed and etched to create spacer structures, with a barrier insulating layer and interlayer dielectric layers used to reduce parasitic capacitance and enhance performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conductive lines are spaced closely to achieve high-density integration, then productivity and integration density improve, but parasitic capacitance between lines increases causing performance degradation
Solution Approach 1:
The patent applies different dielectric materials with different dielectric constants to different regions between conductive lines. Specifically, a first dielectric layer with a first dielectric constant is formed in spaces between first conductive lines, while a second dielectric layer with a second dielectric constant (different from the first) is formed in spaces between second conductive lines. This local differentiation allows optimization of electrical characteristics in high-density regions while maintaining performance in other areas.
Solution Approach 2:
The patent changes the dielectric constant parameter of the insulating material based on the spacing between conductive lines. In regions where conductive lines are closely spaced (first region), a dielectric material with a specific dielectric constant is used to control parasitic capacitance. In regions with wider spacing (second region), a different dielectric constant is used. This parameter adjustment resolves the contradiction between high integration density and performance maintenance.
2Ease of manufacture
If uniform spacing is used between all conductive lines, then manufacturing simplicity is maintained, but performance optimization for different functional regions is prevented
Solution Approach 1:
The patent divides the substrate into multiple regions (first region and second region) with different conductive line spacing configurations. The first region has conductive lines spaced at a first interval, while the second region has conductive lines spaced at a second interval. Each region is filled with dielectric layers having different dielectric constants optimized for that specific region's functional requirements, allowing performance optimization without compromising manufacturing feasibility through a systematic multi-layer approach.
Data Source
AI summary
A semiconductor device and a method of fabricating thereof, including preparing a substrate including a first and second region; forming first and second conductive lines on the first and second region, respectively, the first conductive lines being spaced apart at a first interval and the second conductive lines being spaced apart at a second interval wider than the first interval; forming a dielectric layer in spaces between the first and second conductive lines; etching the dielectric layer until a top surface thereof is lower than top surfaces of the first conductive lines and the second conductive lines; forming a spacer on the etched dielectric layer such that the spacer covers an entire top surface of the etched dielectric layer between the first conductive lines and exposes portions of the etched dielectric layer between the second conductive lines; and removing portions of the etched dielectric layer between the second conductive lines.