Semiconductor Structure With Conductive Lines On Field Oxide

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Solution Overview

Problem

Conventional integrated circuits face challenges with increased size and cost due to the use of metal wires for connecting electronic elements, which also complicates the packaging process.

Innovation Solution

A semiconductor structure comprising a substrate with a well and field oxide layer, where conductive lines are formed on the field oxide layer and spaced apart, allowing for direct contact and reducing the need for additional connecting wires, thereby minimizing size and cost.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If metal wires are used to connect electronic elements, then the connectivity between elements is achieved, but the size of the integrated circuit increases

Engineering Contradiction:
ImproveconnectivityVSAvoidsize
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

The patent merges the connection function into the substrate structure itself by forming conductive lines directly on the semiconductor substrate. This eliminates the need for separate metal wires and external packaging connections, thereby achieving connectivity while minimizing the overall size of the integrated circuit.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent transitions from planar metal wire connections to three-dimensional conductive structures formed directly on the substrate. By utilizing vertical stacking and direct substrate integration, the connection path is shortened and space is optimized, reducing the footprint while maintaining connectivity.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Reliability

If metal wires are used to connect electronic elements, then the connectivity between elements is achieved, but the cost of the integrated circuit increases

Engineering Contradiction:
ImproveconnectivityVSAvoidcost
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The connection function is merged with the substrate fabrication process. Conductive lines are formed using the same semiconductor manufacturing steps as the active elements, eliminating the need for separate wire bonding or metal interconnection processes. This integration reduces manufacturing complexity and cost while ensuring reliable connectivity.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The substrate structure provides its own connection function through integrated conductive lines. The semiconductor substrate serves both as the platform for active elements and as the interconnection medium, eliminating the need for external packaging and separate connection processes, thereby reducing overall manufacturing cost.

Inventive Principle:
Principle #25Self-service

3Reliability

If metal wires are used to connect electronic elements, then the connectivity between elements is achieved, but the packaging process becomes more complex

Engineering Contradiction:
ImproveconnectivityVSAvoidpackaging process
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent merges the connection function into the substrate structure itself by forming conductive lines directly on the semiconductor substrate. This eliminates the need for separate metal wires and external packaging connections, thereby achieving connectivity while minimizing the overall size of the integrated circuit.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The substrate structure provides its own connection function through integrated conductive lines. The semiconductor substrate serves both as the platform for active elements and as the interconnection medium, eliminating the need for external packaging and separate connection processes, thereby reducing overall manufacturing cost.

Inventive Principle:
Principle #25Self-service

Data Source

PatentUS20200227342A1Semiconductor structure
Publication Date: 2020.07.16 VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
  • US20200227342A1 patent drawing
  • US20200227342A1 patent drawing
  • US20200227342A1 patent drawing

AI summary

A semiconductor structure including a substrate, a first well, a field oxide layer, a first conductive line and a second conductive line is provided. The substrate has a first conductivity type. The first well is formed on the substrate and has a second conductivity type. The field oxide layer is disposed on the first well. The first conductive line is formed on the field oxide layer and is in direct contact with the field oxide layer. The second conductive line is formed on the field oxide layer and is in direct contact with the field oxide layer. The first conductive line is spaced apart from the second conductive line.