Semiconductor Peripheral Region Conductive Particle Insulation

Solution Overview

Problem

The existing semiconductor apparatuses face limitations in improving voltage endurance characteristics due to the miniaturization constraints of field plates, which restrict the number of field plates that can be formed, thereby limiting the uniformity of the electric field and voltage endurance.

Innovation Solution

A semiconductor apparatus with a first insulating layer containing conductive particles is introduced, which is formed above the peripheral region of the semiconductor substrate, allowing for a higher density of conductive particles and a more uniform electric field distribution, enhancing voltage endurance characteristics.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the number of field plates is increased to improve voltage endurance characteristics, then the uniformity of electric field distribution is improved, but the width of each field plate must be reduced which reaches the limit of photolithographic miniaturization

Engineering Contradiction:

Improvevoltage endurance characteristicsVSAvoidfield plate miniaturization limit

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

The invention changes the fundamental parameter of the field plate structure by transitioning from continuous field plates to discrete conductive particles. This parameter change allows achieving the same electric field distribution effect without being constrained by photolithographic miniaturization limits, as particles can be deposited with sizes and densities unattainable by conventional patterning methods.

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The invention replaces the mechanical photolithographic patterning process with a particle deposition process. Instead of using light-based photolithography to pattern field plates, the invention uses particle deposition techniques to form conductive particles directly, thereby overcoming the resolution limits of photolithography and enabling higher density field plate configurations.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

2Reliability

If the width of field plates is reduced to increase their number, then more field plates can be installed to improve voltage endurance, but the manufacturing precision is compromised due to photolithographic limits

Engineering Contradiction:

Improvevoltage endurance characteristicsVSAvoidfield plate width control

Core Design Contradiction:

ReliabilityVSManufacturing precision

Solution Approach 1:

The invention replaces the mechanical photolithographic patterning process with a particle deposition process. Instead of using light-based photolithography to pattern field plates, the invention uses particle deposition techniques to form conductive particles directly, thereby overcoming the resolution limits of photolithography and enabling higher density field plate configurations.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The invention changes the fundamental parameter of the field plate structure by transitioning from continuous field plates to discrete conductive particles. This parameter change allows achieving the same electric field distribution effect without being constrained by photolithographic miniaturization limits, as particles can be deposited with sizes and densities unattainable by conventional patterning methods.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The use of conductive particles in the insulating layer increases the voltage endurance of semiconductor apparatuses by ensuring a more uniform electric field distribution and reducing localized high electric fields, even when the width of the peripheral region is narrower than conventional designs, thus enabling smaller and more efficient semiconductor devices.

Implementation Method 1

a potential difference between the active region and the edge surface of the semiconductor substrate is applied to the conductive particles. Because the conductive particles are minute, a large number of conductive particles can be included in the first insulating layer. Therefore, due to the first insulating layer, an electric field distribution in the peripheral region below the first insulating layer can be made more uniform

Methodology Applied

Scientific EffectElectric Field: Electric Field

Data Source

PatentUS8736029B2Semiconductor apparatus

Publication Date: 2014.05.27 DENSO CORP

AI summary

A semiconductor apparatus includes a semiconductor substrate. The semiconductor substrate includes an active region in which a semiconductor device is formed, and a peripheral region which is located between the active region and an edge surface of the semiconductor substrate. A first insulating layer including conductive particles is formed above at least a part of the peripheral region. By constructing the semiconductor apparatus in this manner, generation of a high electric field in the peripheral region can be suppressed. Therefore, voltage endurance characteristics of the semiconductor apparatus can be improved.