Semiconductor Structure Using Conductive Paste for GaN Charge Discharge
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Solution Overview
Problem
High-electron-mobility transistor (HEMT) devices with gallium nitride-based semiconductor materials face issues with negative charge accumulation due to impurities, affecting operational stability and breakdown voltage, particularly when high voltage is applied, as current manufacturing techniques do not fully address these challenges.
Innovation Solution
A semiconductor structure design that includes a conductive paste extending to the side surfaces of the base and buried oxide layer, allowing for electrical grounding and reducing capacitance, thereby improving operational stability and eliminating the need for a through-GaN-via, which increases breakdown voltage and enhances high-voltage operation capabilities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If current manufacturing techniques are used with grounding the silicon substrate or providing a through-GaN-via, then negative charge discharge is achieved, but device complexity and manufacturing difficulty increase
Solution Approach 1:
The patent extracts the grounding function from the traditional through-GaN-via structure and relocates it to the side surface of the base. By applying conductive paste to the side surface, the negative charge discharge path is separated from the main device structure, eliminating the need for complex through-GaN-vias while maintaining the charge discharge function.
Solution Approach 2:
The conductive paste acts as an intermediary element that provides the grounding function. Instead of directly creating a through-GaN-via structure, the conductive paste mediates between the base and the ground, achieving the same electrical function with a simpler implementation.
2Reliability
If through-GaN-via is provided to discharge negative charges, then charge discharge is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent extracts the charge discharge function from the through-GaN-via and implements it on the side surface using conductive paste. This eliminates the need for high-precision via formation processes, as the conductive paste can be applied more tolerantly to the side surface of the base.
3Ease of manufacture
If conventional structures are used, then manufacturing is simpler, but breakdown voltage and high-voltage operation capability are limited
Solution Approach 1:
The patent moves the grounding function from the vertical dimension (through-GaN-via) to the lateral dimension (side surface of the base). This dimensional change allows the structure to achieve better breakdown voltage performance while maintaining manufacturing simplicity, as the conductive paste application on the side surface is equally simple but provides superior electrical performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed semiconductor structure effectively reduces capacitance and improves operational stability by grounding the seed layer and eliminating the need for a through-GaN-via, thereby enhancing the breakdown voltage and operational reliability for high-voltage applications.
Implementation Method 1
the conductive paste is disposed between the base and a lead frame, and the conductive paste extends to the side surface of the base
Data Source
AI summary
A semiconductor structure is provided. The semiconductor structure includes a base, a seed layer, a compound semiconductor layer, a gate structure, a source structure, a drain structure, and a conductive paste. The seed layer is disposed on the base. The compound semiconductor layer is disposed on the seed layer. The gate structure is disposed on the compound semiconductor layer. The source structure and the drain structure are disposed on both sides of the gate structure. In addition, the conductive paste is disposed between the base and a lead frame, and the conductive paste extends to the side surface of the base.