Semiconductor Conductive Pattern Oxidation for Insulation
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Solution Overview
Problem
Three-dimensional semiconductor devices face challenges in achieving low resistance due to the arrangement of conductive patterns between interlayer insulating layers, which are difficult to insulate effectively, leading to potential bridge errors and increased resistance.
Innovation Solution
The semiconductor device includes conductive patterns that fill interlayer spaces between insulating layers and are covered with an isolation layer formed by oxidizing a portion of the conductive patterns, which deviates from the interlayer spaces, thereby reducing resistance and preventing bridge errors by creating an insulating distance between layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conductive patterns are arranged between interlayer insulating layers in three-dimensional semiconductor devices, then device integration is achieved, but resistance increases and insulation becomes difficult
Solution Approach 1:
The conductive pattern extends beyond the interlayer space before the isolation layer is formed, preparing the structure in advance for subsequent oxidation processes that will create the insulating barrier
Solution Approach 2:
The isolation layer acts as an intermediary substance formed by oxidizing the conductive pattern material, creating an insulating barrier between adjacent conductive patterns on different layers while maintaining electrical connection through the channel layer
2Device complexity
If conductive patterns are stacked to be spaced apart from one another, then three-dimensional structure is formed, but resistance decreases
Solution Approach 1:
The conductive pattern extends in the vertical dimension beyond the interlayer space, allowing electrical connection through the channel layer while maintaining spatial separation between patterns on different layers
3Reliability
If conductive patterns deviate from interlayer spaces, then electrical connection is improved, but bridge errors increase
Solution Approach 1:
The conductive pattern material is oxidized to form an isolation layer, converting the potentially harmful extended conductive material that could cause bridge errors into a beneficial insulating structure that prevents such errors while allowing electrical connection through the channel layer
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces the resistance of the conductive patterns and prevents bridge errors by ensuring proper insulation between conductive patterns on different layers, enhancing the overall performance of the semiconductor device.
Implementation Method 1
forming an isolation layer on a surface of the conductive pattern by oxidizing a portion of the conductive pattern by performing an oxidizing process
Data Source
AI summary
A manufacturing method of a semiconductor device may be provided. The method may include forming stacks including interlayer insulating layers and separated by a slit, the interlayer insulating layers surrounding a channel layer and stacked to be spaced apart from one another with an interlayer space interposed therebetween. The method may include forming a conductive pattern filling the interlayer space. The method may include forming an isolation layer on a surface of the conductive pattern by oxidizing a portion of the conductive pattern by performing an oxidizing process.