Semiconductor Die Bonding with Conductive Pillars

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Solution Overview

Problem

The complexity of semiconductor device manufacturing leads to undesired configurations of integrated components with varying thermal properties, resulting in yield loss, poor bondability, and increased manufacturing costs due to limited and costly metallic materials.

Innovation Solution

A method involving the formation of conductive pillars and dielectric layers with through holes, along with polymeric layers, to facilitate improved bonding and communication between semiconductor dies and external components, using techniques like vapor deposition and electroplating, while ensuring efficient material usage and reducing wastage.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If multiple different materials are used for integrated components to achieve desired functionality, then the device functionality is improved, but the thermal property mismatch causes undesired configurations leading to yield loss and poor bondability

Engineering Contradiction:
Improvedevice functionalityVSAvoidbondability
Core Design Contradiction:
Adaptability or versatilityVSReliability

Solution Approach 1:

The patent introduces an intermediate layer structure between different material components to mediate thermal property mismatches. This intermediate layer acts as a buffer that accommodates thermal expansion differences, preventing stress concentration and maintaining reliable bonding between dissimilar materials during manufacturing and operation.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent modifies thermal parameters by selecting materials and结构设计 with compatible thermal expansion coefficients. Through careful parameter selection and optimization of thermal properties in the layered structure, the patent achieves both functional versatility and reliable bonding despite using multiple different materials.

Inventive Principle:
Principle #35Parameter changes

2Adaptability or versatility

If conventional manufacturing processes are used with multiple assembly steps, then device functionality is achieved, but the process complexity increases leading to higher manufacturing costs and material wastage

Engineering Contradiction:
Improvedevice functionalityVSAvoidmanufacturing process complexity
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent combines multiple manufacturing operations into integrated process steps. By merging deposition, patterning, and bonding operations into consolidated process flows, the patent reduces the total number of discrete steps, simplifies manufacturing complexity, and minimizes material wastage while maintaining device functionality.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent employs universal process modules that can perform multiple functions. For example, a single deposition process is designed to create both conductive and dielectric layers through material selection, and a unified bonding process handles both thermal and mechanical bonding requirements, thereby reducing overall process complexity.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances the bondability and yield of semiconductor devices, reduces material wastage, and simplifies the manufacturing process, thereby lowering production costs and improving production efficiency.

Implementation Method 1

using techniques like vapor deposition and electroplating

Methodology Applied
Scientific EffectVapor deposition: Physical Vapour Deposition

Implementation Method 2

using techniques like vapor deposition and electroplating

Methodology Applied
Scientific EffectElectroplating: Electroplating

Data Source

PatentUS9875982B2Semiconductor device and manufacturing method thereof
Publication Date: 2018.01.23 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US9875982B2 patent drawing
  • US9875982B2 patent drawing
  • US9875982B2 patent drawing

AI summary

A semiconductor device includes a first die, a second die bonding to the first die thereby forming a bonding interface, and a pad of the first die and exposed from a polymeric layer of the first die. The semiconductor device further has a conductive material on the pad and extended from the pad in a direction parallel to a stacking direction of the first die and the second die. In the semiconductor device, the conductive material extended to a top surface, which is vertically higher than a backside of the second die, wherein the backside is a surface opposite to the bonding interface.