Conductive Structure Profiles for Semiconductor RC Optimization

Solution Overview

Problem

Semiconductor devices face challenges in achieving higher operating speeds and lower power consumption while maintaining electrical properties and production yields, as increased integration often leads to reduced electrical properties and production yield.

Innovation Solution

The semiconductor device design incorporates a dielectric structure with first and second conductive structures surrounded by different dielectric layers, where the width of the conductive structures and their intervening dielectric structures change with distance from the substrate, optimizing electrical properties by varying resistance and capacitance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If integration of semiconductor device is increased, then device functionality and capacity are improved, but electrical properties and production yield are reduced

Engineering Contradiction:

Improvedevice functionalityVSAvoidelectrical properties

Core Design Contradiction:

Adaptability or versatilityVSReliability

Solution Approach 1:

The patent applies local quality by creating different intervention width profiles in different dielectric layers. The first dielectric layer has interventions that narrow toward the substrate, while the second dielectric layer has interventions that widen toward the substrate. This localized variation in geometric properties allows optimization of electrical characteristics in specific regions without compromising overall device integration benefits.

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The patent implements parameter changes by varying the width of dielectric interventions as a function of distance from the substrate. By continuously adjusting the intervention width parameter through the vertical depth, the patent optimizes electrical properties such as capacitance and resistance in high-density integrated structures, thereby maintaining reliability while achieving increased device functionality.

Inventive Principle:

Principle #35Parameter changes

2Adaptability or versatility

If integration of semiconductor device is increased, then device functionality is improved, but production yield is reduced

Engineering Contradiction:

Improvedevice functionalityVSAvoidproduction yield

Core Design Contradiction:

Adaptability or versatilityVSProductivity

Solution Approach 1:

The patent applies local quality by creating different intervention width profiles in different dielectric layers. The first dielectric layer has interventions that narrow toward the substrate, while the second dielectric layer has interventions that widen toward the substrate. This localized variation in geometric properties allows optimization of electrical characteristics in specific regions without compromising overall device integration benefits.

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The patent implements parameter changes by varying the width of dielectric interventions as a function of distance from the substrate. By continuously adjusting the intervention width parameter through the vertical depth, the patent optimizes electrical properties such as capacitance and resistance in high-density integrated structures, thereby maintaining reliability while achieving increased device functionality.

Inventive Principle:

Principle #35Parameter changes

3Speed

If operating speed is increased, then device performance is improved, but power consumption increases

Engineering Contradiction:

Improveoperating speedVSAvoidpower consumption

Core Design Contradiction:

SpeedVSUse of energy by moving object

Solution Approach 1:

The patent implements parameter changes by varying the width of dielectric interventions as a function of distance from the substrate. By continuously adjusting the intervention width parameter through the vertical depth, the patent optimizes electrical properties such as capacitance and resistance in high-density integrated structures, thereby maintaining reliability while achieving increased device functionality.

Inventive Principle:

Principle #35Parameter changes

Data Source

PatentUS20230402376A1Semiconductor devices including conductive structures

Publication Date: 2023.12.14 SAMSUNG ELECTRONICS CO LTD

AI summary

Semiconductor devices and fabrication methods thereof. For example, a semiconductor device may include a dielectric structure, and first conductive structures and second conductive structures. The dielectric structure may include a first dielectric layer that surrounds the first conductive structures and a second dielectric layer that surrounds the second conductive structures. The first dielectric layer may include a first intervention between the first conductive structures. The second dielectric layer may include a second intervention between the second conductive structures. A width in a first direction of the first intervention may decrease in a second direction from a top surface toward a bottom surface of the first intervention. A width in the first direction of the second intervention may increase in the second direction from a top surface toward a bottom surface of the second intervention. The first dielectric layer and the second dielectric layer may include different dielectric materials.