Semiconductor Conductive Structure Oxidation Prevention
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Solution Overview
Problem
Conductive patterns and gate electrodes in semiconductor devices face increased resistance and electrical failures due to oxidation and nitrogen infiltration, leading to structural deformities and high resistance, which are not adequately addressed by conventional methods using polysilicon and metal silicide or pure metal structures.
Innovation Solution
A method involving the formation of a conductive structure with a polysilicon layer, a metal layer, and a barrier layer, followed by a capping layer using thermal or plasma atomic layer deposition (ALD) with silicon nitride, which prevents oxidation and nitrogen permeation, ensuring low resistance and structural stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a metal layer is used to form a conductive structure, then resistance is reduced, but the metal layer is easily oxidized and nitrogen permeates into it, causing resistance increase and structural deformation
Solution Approach 1:
A polysilicon layer is introduced as an intermediary between the metal layer and the external environment. This polysilicon layer acts as a barrier that prevents oxidation and nitrogen permeation while allowing the metal layer to maintain its low resistance properties. The polysilicon layer mediates the interaction between the metal and harmful environmental factors.
Solution Approach 2:
The conductive structure is formed as a composite material system combining metal and polysilicon layers. This composite structure leverages the low resistance of metal while utilizing the oxidation resistance and nitrogen barrier properties of polysilicon, achieving a balance between electrical performance and environmental stability.
2Reliability
If polysilicon and metal silicide are used to form a conductive structure, then resistance is reduced compared to pure polysilicon, but the resistance is not reduced to a sufficient level for highly integrated semiconductor devices
Solution Approach 1:
The conductive structure uses a composite material system combining metal and polysilicon layers. This composite structure leverages the low resistance of metal while utilizing the oxidation resistance and nitrogen barrier properties of polysilicon, achieving a balance between electrical performance and environmental stability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves a conductive structure with low resistance and improved electrical characteristics, preventing structural deformation and electrical failures, enhancing the reliability and integration of semiconductor devices.
Implementation Method 1
A capping layer is formed on the oxide layer and the conductive layer pattern
Implementation Method 2
A capping layer is formed on the oxide layer and the conductive layer pattern
Implementation Method 3
A capping layer is formed on the oxide layer and the conductive layer pattern
Data Source
AI summary
A method of forming a conductive structure in a semiconductor device includes forming a conductive layer on a substrate, forming a conductive layer pattern on the substrate by patterning the conductive layer, forming an oxide layer on the substrate and a portion of the conductive layer, and forming a capping layer on the oxide layer and the conductive layer pattern.