Semiconductor Structures with Conductive Vias and Thermal Elements
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Solution Overview
Problem
Stacked semiconductor die packages face challenges with thermal management and oxide-induced wafer warpage due to heat generation and dielectric material-induced stresses, which can lead to increased operating temperatures and substrate bowing, hindering processing and yield.
Innovation Solution
The implementation of semiconductor structures with conductive vias and thermally conductive elements, where dielectric and insulating materials are limited to specific areas around conductive elements, reducing oxide-induced stresses and enhancing thermal conductivity by allowing direct contact between thermally conductive elements and the substrate, thus minimizing continuous dielectric material across the substrate surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If dielectric materials are used to isolate conductive portions from the substrate, then electrical isolation is improved, but oxide-induced stresses cause wafer warpage
Solution Approach 1:
The continuous dielectric material layer is segmented by creating openings to expose the substrate in specific regions. This segmentation allows the dielectric material to provide electrical isolation where needed while leaving gaps that prevent oxide-induced stress accumulation, thereby reducing wafer warpage while maintaining necessary electrical isolation.
Solution Approach 2:
The patent applies dielectric material selectively in specific locations rather than uniformly across the entire substrate surface. By placing dielectric material only where electrical isolation is required and exposing the substrate in other regions, the patent achieves local electrical isolation while minimizing overall oxide-induced stresses that cause warpage.
2Temperature
If thermally conductive elements are added to improve heat transfer, then thermal management is improved, but device complexity increases
Solution Approach 1:
The patent combines the functions of electrical conductors and thermal management elements by using the same conductive interconnect structures to serve dual purposes. The conductive elements that provide electrical connectivity between stacked dies also function as thermal pathways to conduct heat away from the dies, thereby improving thermal management without adding separate thermal management components.
Solution Approach 2:
The conductive interconnect structures are designed to perform multiple functions simultaneously: electrical connectivity between dies, mechanical support for stacked die assembly, and thermal conduction for heat dissipation. This multi-functionality reduces device complexity by eliminating the need for separate dedicated thermal management structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces wafer warpage and improves thermal management by limiting dielectric material-induced stresses and enhancing heat transfer, maintaining operational temperatures within acceptable limits and improving handling and processing of semiconductor wafers.
Implementation Method 1
thermally conductive elements and methods of forming such structures... enhancing thermal conductivity by allowing direct contact between thermally conductive elements and the substrate... improving thermal management by limiting dielectric material-induced stresses and enhancing heat transfer
Data Source
AI summary
A semiconductor structure comprises conductive vias extending from an active surface of a substrate to a back side of the substrate and surrounded by a dielectric material. The conductive vias are surrounded by recessed isolation structures formed within the back side of the substrate. Conductive elements extend over the conductive vias and laterally over at least portions of the isolation structures. The conductive elements are in electrical contact with the conductive vias and electrically isolated from the substrate by the isolation structures. Thermally conductive elements in contact with the substrate are laterally spaced from the conductive elements. Die assemblies comprising the semiconductor structure, methods of forming the semiconductor structure, and methods of forming the die assemblies are also disclosed.