Semiconductor Connection Structures for Larger Contact Landing Areas
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Solution Overview
Problem
The limited size of the landing area for contact structures in semiconductor devices, particularly in 3D memory devices, leads to word line to word line leakage and complicates the formation of reliable connection lines, increasing fabrication costs and reducing production yield.
Innovation Solution
The semiconductor device incorporates contact structures coupled to conductive layers with connection structures along a horizontal direction, allowing for a larger landing area and mitigating word line to word line leakage by ensuring the connection structure size is not limited by the thickness of metal layers or distance between them.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If contact structures are formed in conventional vertical orientation, then the device structure is simple, but the landing area is limited causing word line to word line leakage
Solution Approach 1:
The patent transitions from conventional vertical contact structures to horizontally extending connection structures. The connection structure includes a body portion extending horizontally from the contact structure, allowing the landing area to extend in the horizontal direction rather than being constrained vertically. This dimensional change enables larger landing areas that prevent word line to word line leakage while maintaining fabrication feasibility through sequential formation processes.
2Reliability
If the landing area size is limited by metal layer thickness and distance between layers, then the fabrication process is simple, but the connection reliability is reduced
Solution Approach 1:
The connection structure is segmented into distinct portions: a contact structure portion coupled to the conductive layer, a body portion extending horizontally, and optionally a head portion. This segmentation allows each portion to be optimized independently for its specific function while being formed through a integrated fabrication process, improving connection reliability without excessive fabrication complexity.
Solution Approach 2:
The connection structure is formed in advance during the fabrication process, with the body portion extending from the contact structure before final device assembly. This preliminary formation ensures proper positioning and electrical connection are established early, improving reliability while the structured approach keeps manufacturing manageable.
3Reliability
If contact structures are formed with sufficient landing area, then word line leakage is prevented, but the fabrication cost increases
Solution Approach 1:
The connection structure serves multiple functions: providing electrical connection from the contact structure to external circuitry, establishing a large landing area to prevent word line leakage, and potentially serving as part of the interconnect system. This multi-functionality reduces the need for separate structures, thereby controlling fabrication costs while achieving reliable leakage prevention.
Data Source
AI summary
The present disclosure relates to methods, devices, systems, and techniques for managing connection structures in semiconductor devices. An example semiconductor device includes a first stack of conductive layers and isolating layers alternating with each other along a first direction. A connection region of the semiconductor device is adjacent to an array region of the semiconductor device. The semiconductor device further includes contact structures extending along the first direction. The contact structures include a first contact structure coupled to a first conductive layer of the first stack. The semiconductor device further includes a first connection structure in contact with the first contact structure along a second direction perpendicular to the first direction.