Semiconductor Connection Strain Simulation for Peripheral Reinforcement
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Solution Overview
Problem
The increasing use of 5G communication systems has highlighted issues with traditional resin materials in semiconductor packages, leading to reduced high-frequency electromagnetic wave transmission efficiency and potential connection deterioration due to strain from peripheral reinforcements.
Innovation Solution
A simulation method is developed to analyze the strength of connections between elements and substrates in semiconductor devices, involving a simulation model with a reinforcement disposed at the periphery of the element, and calculating the amount of strain applied to the connection. The method also determines the optimal cross-sectional area of the reinforcement to ensure sufficient connection strength.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If a reinforcement is disposed only at a periphery of an element instead of filling the space around the connection with a resin material, then the transmission efficiency of high-frequency electromagnetic waves is improved, but the connection is subjected to strain generated by the expansion and contraction of the reinforcement and may deteriorate
Solution Approach 1:
The invention changes the physical parameters of the reinforcement by controlling the cross-sectional area of the cured product to be 0.01 mm² or more and 0.5 mm² or less. This parameter optimization allows the reinforcement to provide mechanical support while minimizing thermal expansion strain on the connection, thus maintaining both signal transmission efficiency and connection reliability.
Solution Approach 2:
The invention applies local quality by disposing the reinforcement only at the periphery of the element rather than filling the entire space around the connection. This localized approach reduces the overall volume of reinforcement material, minimizing electromagnetic wave interference while providing sufficient mechanical support at critical locations.
2Productivity
If the space around the connection is not filled with a resin material, then the transmission efficiency of high-frequency electromagnetic waves is improved, but the connection may be subjected to strain from the reinforcement and deteriorate
Solution Approach 1:
The invention optimizes the cross-sectional area parameter of the reinforcement to a specific range (0.01-0.5 mm²) that balances mechanical support function with minimal electromagnetic interference, enabling high-speed communication while preventing connection deterioration from thermal strain.
Solution Approach 2:
The invention uses a cured product (resin) as a reinforcement structure that copies the supportive function traditionally provided by bulk resin filling, but with a minimized cross-sectional area that reduces electromagnetic wave attenuation while maintaining connection protection.
3Reliability
If a reinforcement with larger cross-sectional area is used to protect the connection from strain, then the connection strength is improved, but the transmission efficiency of high-frequency electromagnetic waves deteriorates
Solution Approach 1:
The invention identifies and implements the optimal cross-sectional area range (0.01-0.5 mm²) for the reinforcement, which is sufficient to provide mechanical protection against thermal strain while being small enough to minimize attenuation of high-frequency electromagnetic waves, thus balancing connection reliability and communication efficiency.
Data Source
AI summary
A simulation method, including: preparing a simulation model of a semiconductor device that includes a substrate, an element, a connection that electrically connects the substrate and the element, and a reinforcement that is disposed at a periphery of the element; and calculating an amount of strain applied to the connection in the simulation model.