Semiconductor Contact Structure Using 2D Diffusion Barriers
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Solution Overview
Problem
As transistors in integrated circuit devices become smaller, the diffusion of gases or metals used in source/drain electrode formation into surrounding layers becomes a significant issue, affecting device performance and reliability.
Innovation Solution
The implementation of a semiconductor device structure that includes a conductive two-dimensional material-based conductive barrier between the silicide film and the electrode, reducing the thickness of the conductive barrier to a range of about 0.3 nm to 2 nm, and using the same two-dimensional material for the electrode to enhance electrical conductivity and prevent diffusion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the thickness of layers constituting the transistor is reduced to increase degree of integration, then the space occupied by the transistor is reduced, but gases or metals used for forming source/drain electrodes diffuse into surrounding layers
Solution Approach 1:
A conductive barrier layer comprising a conductive two-dimensional material is introduced between the source/drain electrode and the silicide film. This intermediary layer prevents diffusion of metals or gases from the electrode into the silicide film and surrounding layers, while maintaining electrical conductivity through its conductive properties.
Solution Approach 2:
The conductive barrier utilizes a composite structure combining a two-dimensional material (such as graphene, black phosphorus, or h-BN) with conductive properties. This composite material provides both the barrier function to prevent diffusion and the conductive function to maintain electrical connectivity, resolving the contradiction between thin-layer requirements and diffusion prevention.
2Reliability
If a conductive barrier is introduced to prevent diffusion, then diffusion into surrounding layers is reduced, but the device structure becomes more complex
Solution Approach 1:
The conductive barrier is implemented as an ultrathin two-dimensional material layer with thickness controllable in the range of about 0.3 nm to 2 nm. This thin film approach provides effective diffusion prevention while minimizing the added structural complexity and maintaining compatibility with scaled device dimensions.
Solution Approach 2:
By adjusting the thickness of the two-dimensional material layer within the range of 0.3 nm to 2 nm, the device achieves optimal balance between diffusion prevention capability and electrical conductivity. The parameter optimization allows the barrier to be effective without excessively increasing device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively reduces the size of semiconductor devices while maintaining high performance by preventing diffusion and minimizing contact resistance, thus enhancing the reliability and efficiency of the devices.
Implementation Method 1
a conductive barrier between the silicide film and the electrode... effectively reduces the size of semiconductor devices while maintaining high performance by preventing diffusion
Implementation Method 2
The conductive barrier may include a conductive two-dimensional material... using the same two-dimensional material for the electrode to enhance electrical conductivity
Data Source
AI summary
A semiconductor device includes a first source/drain structure including a first semiconductor region and a first electrode in electrical contact with the first semiconductor region; a second source/drain structure including a second semiconductor region and a second electrode in electrical contact with the second semiconductor region; a channel between the first semiconductor region and the second semiconductor region; and a gate structure including a gate insulating film covering the channel and a gate electrode covering the gate insulating film. The first source/drain structure further includes a silicide film between the first semiconductor region and the first electrode and a conductive barrier between the silicide film and the first electrode. The conductive barrier includes a conductive two-dimensional material.