Semiconductor Contact Air-Gap Structure for Scaled IC Fabrication
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Solution Overview
Problem
The complexity of manufacturing semiconductor devices increases with the scaling down process, necessitating advancements in IC manufacturing to maintain efficiency and reduce costs.
Innovation Solution
A method involving the formation of a semiconductor device with a contact structure that includes an air gap between the contact structure and dielectric layers, which is sealed by expanding the dielectric layer through doping, ensuring electrical connectivity while maintaining structural integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the geometry size is scaled down to increase functional density, then production efficiency and cost are improved, but manufacturing complexity increases
Solution Approach 1:
The patent applies preliminary action by forming a mandrel structure and spacer layer before the actual contact hole etching process. The mandrel and spacer are prepared in advance to define the contact hole pattern, allowing subsequent etching to proceed more efficiently and with better precision at scaled dimensions.
Solution Approach 2:
The patent uses an intermediary approach by introducing a mandrel structure and spacer layer as intermediate elements that facilitate the formation of contact holes. These intermediary structures enable precise pattern transfer and control during the etching process, addressing the manufacturing complexity challenge while maintaining productivity benefits from scaling.
2Reliability
If an air gap is formed between the contact structure and dielectric layers, then electrical connectivity is improved, but structural integrity may be compromised
Solution Approach 1:
The patent applies local quality by creating an air gap specifically in the contact region between the contact structure and dielectric layers, while maintaining solid dielectric material in other areas. This localized air gap improves electrical connectivity where needed without compromising the overall structural integrity of the device.
Solution Approach 2:
The patent uses a thin film spacer layer to define and maintain the air gap structure. This thin film acts as a structural element that preserves integrity while allowing the air gap to form, balancing the need for electrical connectivity with structural stability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the manufacturing process by providing reliable electrical connections and reducing manufacturing complexity, thereby improving efficiency and lowering costs.
Implementation Method 1
expanding the dielectric layer through doping
Data Source
AI summary
A semiconductor device and a method of forming the same are provided. The semiconductor device includes a substrate, a gate structure, a dielectric structure and a contact structure. The substrate has source/drain (S/D) regions. The gate structure is on the substrate and between the S/D regions. The dielectric structure covers the gate structure. The contact structure penetrates through the dielectric structure to connect to the S/D region. A lower portion of a sidewall of the contact structure is spaced apart from the dielectric structure by an air gap therebetween, while an upper portion of the sidewall of the contact structure is in contact with the dielectric structure.