Semiconductor Contact Structure With Barrier Layers Against Shorting
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Solution Overview
Problem
The challenge in semiconductor manufacturing lies in the difficulty of electrically connecting capacitor structures to transistors due to their small dimensions, leading to potential short-circuiting and process complexity as semiconductor nodes shrink.
Innovation Solution
A semiconductor structure is designed with barrier layers on the side walls of active and contact structures, using different etching selectivity materials to prevent over-etching and short-circuiting, and enhancing contact areas for improved electrical connection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If semiconductor process nodes are reduced to increase element density, then integration level is improved, but manufacturing precision deteriorates due to difficulty in electrically connecting capacitor structures to transistors
Solution Approach 1:
The patent introduces a capacitor contact structure as an intermediary element between the transistor source and the capacitor. This contact structure includes a first portion connected to the source and a second portion connected to the capacitor, with a contact region between them. This intermediary structure facilitates electrical connection at reduced process nodes by providing a dedicated pathway that is easier to manufacture with high precision than direct connections.
2Productivity
If capacitor and transistor dimensions are reduced to increase integration, then element density is improved, but reliability deteriorates due to potential short-circuiting
Solution Approach 1:
The patent segments the electrical connection path into distinct portions: a first portion of the capacitor contact structure connected to the transistor source, a second portion connected to the capacitor, and a contact region between them. This segmentation allows each portion to be optimized and controlled separately, reducing the risk of short-circuiting while maintaining integration. The segmented structure enables better process control and reduces manufacturing variability that could lead to reliability issues.
3Manufacturing precision
If process complexity increases to achieve accurate connections at smaller nodes, then manufacturing precision is improved, but device complexity worsens
Solution Approach 1:
The patent merges the capacitor contact structure with the transistor source region by forming the contact structure from the source material. The first portion of the contact structure is integrated with the source, reducing the need for separate fabrication steps. This merging approach maintains manufacturing precision while reducing device complexity by eliminating redundant structures and simplifying the fabrication process.
Data Source
AI summary
Disclosed are a semiconductor structure and a method for manufacturing the same. The semiconductor structure includes: a substrate, where the substrate includes a plurality of active structures spaced apart along a first direction and a second direction, each of the plurality of active structures including a first active part and a second active part, and the substrate includes a first surface, each of the second active parts extending, along the corresponding first active part, towards the first surface and being provided with a first end surface in a direction facing the first surface; a plurality of contact structures, the plurality of contact structures being arranged on the first end surfaces of the second active parts; and a plurality of barrier layers arranged on the first surface and covering side walls of part of the second active parts and side walls of part of the plurality of contact structures.