Semiconductor Contact Layout With Blocking Films for Misalignment Control
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Solution Overview
Problem
In highly integrated and miniaturized semiconductor devices, space constraints lead to misalignment between contact structures, increasing the height of the device and potentially causing short-circuits, which reduces yield, performance, and reliability.
Innovation Solution
A semiconductor device design with blocking films interposed between metal structures to prevent misalignment and short-circuits, featuring tapered gate contacts and vertically extending blocking films to ensure accurate positioning of contact structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If contact structures are disposed spaced apart in vertical direction to secure alignment, then misalignment and short-circuits are prevented, but device height increases
Solution Approach 1:
The patent transitions from vertical spacing to horizontal spacing of contact structures. By arranging contact structures side-by-side in the horizontal plane rather than stacking them vertically, the invention maintains alignment accuracy while reducing device height. This dimensional reorganization allows multiple contact structures to coexist at the same vertical level without interfering with each other's alignment.
Solution Approach 2:
The patent divides the contact structure array into multiple independently positioned contact structures that are horizontally segmented across the device surface. Each contact structure can be precisely positioned in the horizontal plane, allowing for accurate alignment without requiring vertical separation. This segmentation enables parallel arrangement of contacts that would otherwise need to be stacked vertically.
2Length of stationary object
If contact structures are disposed closer together to reduce device height, then miniaturization is achieved, but misalignment and short-circuits increase
Solution Approach 1:
The invention resolves this contradiction by moving the spacing dimension from vertical to horizontal. Contact structures can be placed close together vertically (reducing height) while maintaining adequate horizontal separation for alignment. This dimensional swap allows miniaturization in the vertical direction without compromising alignment accuracy, as the critical spacing now occurs in the horizontal plane where it can be precisely controlled.
Solution Approach 2:
The patent introduces blocking films as intermediary structures between adjacent contact structures. These blocking films act as spacers and alignment references, ensuring that contact structures maintain proper horizontal spacing even when closely packed. The blocking films mediate the interaction between neighboring contacts, preventing misalignment and short-circuits while allowing compact vertical stacking.
3Reliability
If more blocking films are added to prevent short-circuits, then reliability improves, but device complexity increases
Solution Approach 1:
The patent segments the blocking function into localized blocking films positioned only where needed between specific contact structures. Rather than implementing a comprehensive blocking system throughout the entire device, the blocking films are strategically placed only in critical areas where short-circuits could occur. This selective segmentation provides effective short-circuit prevention while minimizing the overall number of blocking structures and associated complexity.
Solution Approach 2:
The invention applies blocking films with local quality - they are present only in specific locations where alignment and isolation are critical, rather than uniformly throughout the device. This localized approach provides maximum reliability benefit where needed while avoiding unnecessary complexity in regions where blocking is not required. The blocking films are concentrated at contact structure interfaces where they provide the most value.
Data Source
AI summary
A semiconductor device includes: a base pattern; a first metal structure penetrating the base pattern in a first direction; at least one gate structure including a gate electrode disposed on the first metal structure in the first direction; a second metal structure penetrating the base pattern in the first direction and spaced adjacent to the first metal structure in a second direction intersecting the first direction; and a source/drain structure including at least one of a source electrode or a drain electrode disposed on the second metal structure in the first direction, wherein the first metal structure and the second metal structure are electrically separated from each other by a blocking film.