Semiconductor Contact Expansion via Dielectric Thermal Contraction
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Solution Overview
Problem
In semiconductor devices, smaller contact sizes lead to higher contact resistance values, reducing device performance, necessitating a method to increase contact size and reduce resistance.
Innovation Solution
A manufacturing method involving a substrate with word lines and dielectric layers, where a heating process shrinks the dielectric layer inward, correspondingly expanding the contact outward, thereby increasing contact size and reducing resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If the contact size is reduced to increase device integration, then the device density is improved, but the contact resistance increases and device performance deteriorates
Solution Approach 1:
The patent changes the physical state of the dielectric layer by applying heat treatment, causing it to shrink and thereby expanding the contact area. This parameter change (thermal treatment) allows the contact size to increase without changing the original contact opening dimensions, effectively reducing contact resistance while maintaining device integration
Solution Approach 2:
The patent utilizes thermal contraction of the dielectric layer (opposite of thermal expansion) through heat treatment. The dielectric layer shrinks when heated, which causes the contact area to expand outward, thereby increasing contact size and reducing contact resistance
2Reliability
If the contact size is increased to reduce contact resistance, then the device performance is improved, but the device integration density decreases
Solution Approach 1:
The patent applies thermal treatment to change the physical parameters of the dielectric layer, causing it to shrink and expand the contact area. This allows contact size to increase for better electrical performance without requiring larger initial contact openings, thus maintaining device integration density
3Area of moving object
If the dielectric layer is shrunk through heating to expand the contact, then the contact size is increased, but the dielectric layer structure may be compromised
Solution Approach 1:
The patent utilizes phase transition or structural transformation of the dielectric layer material during heat treatment. The dielectric layer undergoes a controlled structural change that results in shrinkage and contact expansion while maintaining the integrity and electrical insulation properties of the dielectric structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively enhances semiconductor device performance by increasing contact size and reducing resistance values, while maintaining proper electrical connections and avoiding electrical failures.
Implementation Method 1
A heating process is performed on the first dielectric layer to shrink the first dielectric layer inward, and the contact is correspondingly expanded outward
Data Source
AI summary
A manufacturing method of a semiconductor device is provided. A substrate is provided. The substrate has an active area. A plurality of word lines are formed on the substrate. Each of the word lines is extended along a first direction, and the word lines are arranged on both sides of the active area along a second direction. A first dielectric layer is formed on the substrate. The first dielectric layer covers the active area and the word lines. A contact is formed on the active area. The contact penetrates through the first dielectric layer and is electrically connected to the active area. A heating process is performed on the first dielectric layer to shrink the first dielectric layer inward, and the contact is correspondingly expanded outward.