Semiconductor Contact Structure With Variable Dielectric Isolation
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Solution Overview
Problem
The increasing complexity and miniaturization of semiconductor integrated circuits (ICs) pose challenges in processing and manufacturing, requiring improved methods to enhance efficiency and reduce costs.
Innovation Solution
A semiconductor device structure is developed with a dielectric layer having varying thickness portions to improve electrical isolation and expand the process window for forming conductive features, achieved through angled implantation and selective etching processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If geometry size is decreased to increase functional density, then production efficiency and cost are improved, but processing complexity increases
Solution Approach 1:
The patent divides the dielectric layer into multiple portions with different thicknesses (first portion and second portion) separated by a discontinuity. This segmentation allows different regions to serve different functions: the thinner first portion facilitates conductive feature formation while the thicker second portion maintains electrical isolation, thereby reducing processing complexity despite continued miniaturization
Solution Approach 2:
The patent applies local quality by creating spatial variation in dielectric layer thickness. The first portion has reduced thickness specifically where conductive features need to be formed, while the second portion maintains greater thickness for electrical isolation. This localized modification optimizes the formation process in critical areas without compromising overall device performance
2Manufacturing precision
If dielectric layer thickness is reduced to facilitate conductive feature formation, then manufacturing precision is improved, but electrical isolation deteriorates
Solution Approach 1:
The dielectric layer is segmented into a first portion with discontinuity (thinner) and a second portion (thicker), allowing the formation process to work effectively in the first portion while the second portion continues to provide robust electrical isolation between adjacent structures
Solution Approach 2:
Different thicknesses are applied locally: the first portion has reduced thickness to enlarge the process window for conductive feature formation, while the second portion maintains greater thickness to ensure adequate electrical isolation, thus resolving the contradiction between manufacturability and reliability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This structure enhances electrical isolation and enlarges the process window for forming conductive features, thereby improving manufacturing efficiency and reducing costs in semiconductor device production.
Implementation Method 1
a dielectric layer having a first portion and a second portion. The first portion is disposed between the interlayer dielectric layer and the first conductive feature
Implementation Method 2
achieved through angled implantation and selective etching processes
Implementation Method 3
achieved through angled implantation and selective etching processes
Data Source
AI summary
Embodiments of the present disclosure provide a semiconductor device structure and methods of forming the same. The structure includes a source/drain region disposed over a substrate, an interlayer dielectric layer disposed over the source/drain region, a first conductive feature disposed over the source/drain region, a gate electrode layer disposed over the substrate, and a dielectric layer surrounding the first conductive feature. The dielectric layer includes a first portion disposed between the interlayer dielectric layer and the first conductive feature and a second portion disposed between the first conductive feature and the gate electrode layer, at least a portion of the first portion has a first thickness, and the second portion has a second thickness substantially greater than the first thickness.