Semiconductor Contact Structure With Hydrogen Diffusion Barrier
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Solution Overview
Problem
Transistors in semiconductor devices are vulnerable to contaminants such as hydrogen, oxygen, and water, which affect the reliability and electrical properties of the channel due to reduced bond strength and increased defects, particularly during high-energy and high-temperature fabrication processes.
Innovation Solution
Incorporating a protection layer made of transition metals from groups 3 to 12 in periods 5 to 7 and the lanthanide and actinide series to prevent diffusion of contaminants into the channel, ensuring the channel's integrity and electrical conductivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If high-energy and high-temperature fabrication processes are used to enhance transistor performance, then manufacturing capability and device performance are improved, but contaminant diffusion into the channel increases causing reduced bond strength and increased defects
Solution Approach 1:
A protection layer comprising transition metals from groups 3 to 12 in periods 5 to 7 and the lanthanide and actinide series is introduced as an intermediary barrier between the channel and the fabrication environment. This protection layer has low solid solubility and hydrogen diffusion coefficient, effectively blocking contaminant diffusion during high-energy and high-temperature processes while allowing the fabrication to proceed with enhanced performance.
Solution Approach 2:
The protection layer is formed as a multi-layer composite structure with specific material composition (transition metals from groups 3 to 12 in periods 5 to 7 and lanthanide and actinide series). This composite material structure provides both mechanical integrity and contaminant barrier properties, enabling the channel to withstand high-energy fabrication processes without degradation.
2Reliability
If conventional conductive materials are used in contact structures and gate electrodes, then electrical conductivity is achieved, but contaminant diffusion into the channel occurs reducing device reliability
Solution Approach 1:
Contact structures and gate electrodes are designed as multi-layer composite structures combining conventional conductive materials with the protection layer material. The protection layer is disposed between the channel and the conductive portion, creating a composite structure that maintains electrical conductivity while providing contaminant barrier protection.
Solution Approach 2:
The protection layer serves as an intermediary barrier within the contact structures and gate electrodes. It is positioned between the channel and the conductive materials, blocking contaminant diffusion paths while allowing electrical current to pass through the conductive portions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The protection layer effectively hinders the diffusion of hydrogen and other contaminants, enhancing the reliability and performance of transistors by maintaining bond strength and reducing defects, thereby improving the overall semiconductor structure's functionality.
Implementation Method 1
Incorporating a protection layer made of transition metals from groups 3 to 12 in periods 5 to 7 and the lanthanide and actinide series to prevent diffusion of contaminants into the channel
Data Source
AI summary
A semiconductor structure includes a base structure having a conductive feature therein, a transistor disposed above the base structure, a capacitor disposed on the transistor, and an interconnecting routing that interconnects the second electrode with the conductive feature. The transistor includes a gate electrode, a gate dielectric, a channel spaced apart from the gate electrode through the gate dielectric, and two contact structures connected to the channel and spaced apart from each other. Each of the two contact structures includes a main body, and a protection layer that includes a transition metal which is one of elements of groups 3 to 12 in periods 5 to 7, elements of lanthanide series, and elements of actinide series. The capacitor includes a first electrode connected to one of the two contact structures of the transistor, a second electrode, and a dielectric interposed between the first electrode and the second electrode.