Semiconductor Device Contact Hole Conductive Layer Design
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Solution Overview
Problem
The existing semiconductor devices face challenges with depression and projection differences in wires, leading to non-uniform orientation films, degraded image quality in liquid crystal display devices, increased material costs, reduced productivity, and a higher risk of short-circuiting due to uneven film thickness and non-uniform application of insulating layers.
Innovation Solution
A semiconductor device structure is introduced with a first conductive layer, an insulating layer, and a second conductive layer where the end portion of the second conductive layer is located inside the contact hole, allowing it to overlap with the first conductive layer without an insulating layer interposed, thereby reducing depression and projection differences. This design also includes a third conductive layer connected to the first and second conductive layers within the contact hole, ensuring uniformity and reducing material usage and light-exposure time during insulating layer formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the insulating layer is formed thick in depression portions to ensure coverage, then uniformity of the insulating layer is improved, but material cost increases and productivity decreases
Solution Approach 1:
The conductive layer is formed to extend into the contact hole before the insulating layer is deposited. This preliminary configuration ensures that when the insulating layer is formed, it does not need to be excessively thick in depression portions, as the conductive layer already provides the necessary structural support and coverage. This reduces material usage and shortens light-exposure time while maintaining uniformity.
2Manufacturing precision
If the insulating layer is formed thick in depression portions, then coverage is ensured, but light-exposure time extends
Solution Approach 1:
The conductive layer is preliminarily formed to protrude into the contact hole, creating a structural foundation that reduces the required thickness of the subsequent insulating layer. This preliminary configuration ensures adequate coverage without requiring excessive insulating layer thickness, thereby reducing light-exposure time during photo processing.
3Manufacturing precision
If the end portion of the second conductive layer is located inside the contact hole, then depression and projection differences are reduced, but device complexity increases
Solution Approach 1:
The second conductive layer is extended into the vertical dimension within the contact hole, rather than only expanding in the horizontal plane. This dimensional change allows the conductive layer to reach into depression portions and fill projection differences, creating a more uniform surface for the insulating layer without requiring additional processing steps or complex device architecture.
Data Source
AI summary
A semiconductor device of the present invention has a first conductive layer, a second conductive layer, an insulating layer which is formed between the first conductive layer and the second conductive layer and which has a contact hole, and a third conductive layer which is connected to the first conductive layer and the second conductive layer and of which at least a part of an end portion is formed inside the contact hole. Near a contact hole where the second conductive layer is connected to the third conductive layer, the third conductive layer does not overlap with the second conductive layer with the first insulating layer interposed therebetween and an end portion of the third conductive layer is not formed over the first insulating layer. This allows suppression of depression and projection of the third conductive layer.