Semiconductor Contact Hole Layout for Dense Memory Reliability
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Solution Overview
Problem
The increasing memory density in semiconductor structures leads to low reliability due to defects in contact holes, affecting performance and yield.
Innovation Solution
A semiconductor structure design with multiple parallel contact holes and staggered arrangements to limit potential interference, ensuring that even if one contact hole is defective, others can still function, enhancing reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If memory density is increased, then chip area is reduced, but reliability deteriorates due to contact hole defects
Solution Approach 1:
The patent divides the contact hole function into multiple parallel contact holes (first, second, third contact hole patterns) within the same transistor structure. Each contact hole serves as an independent conductive path, so if one fails due to defects, others can maintain circuit functionality, thus improving reliability while maintaining high density
Solution Approach 2:
The patent preemptively adds redundant contact holes to compensate for potential defects before they occur. By designing multiple parallel contact paths in advance, the structure creates a safety margin that cushions against the harmful effects of contact hole defects, ensuring continued operation even when some contact holes fail
2Area of stationary object
If memory density is increased, then chip area is reduced, but manufacturing precision requirements increase
Solution Approach 1:
The contact holes are segmented into multiple parallel patterns that can be formed using standard photolithography and etching processes. Each contact hole follows the same manufacturing template, allowing existing fabrication capabilities to produce multiple contact holes with consistent dimensions and positioning, thus managing precision requirements
Solution Approach 2:
Multiple contact holes are merged into a single transistor contact structure, sharing common alignment references and manufacturing steps. The parallel contact hole patterns are formed simultaneously in the same process layer, reducing the need for additional high-precision alignment steps and maintaining compatibility with existing manufacturing precision levels
Data Source
AI summary
A semiconductor structure and a memory are provided The semiconductor structure includes: a first active area pattern; a first gate pattern, a second gate pattern, a third gate pattern and a fourth gate pattern which are arranged at intervals in a first direction; a first connection pattern, arranged to connect the second gate pattern and the third gate pattern in parallel; a second connection pattern, arranged to connect the first gate pattern and the fourth gate pattern in parallel; at least two first contact hole patterns arranged in parallel; and at least two second contact hole patterns and at least two third contact hole patterns arranged in parallel.