Semiconductor Contact Isolation Structure for Denser Transistor Layouts
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Solution Overview
Problem
There is a limit to how closely transistors in semiconductor devices can be integrated due to the need for a certain distance between them to prevent electrical interference and leakage, which affects performance and reliability.
Innovation Solution
A semiconductor device design that includes a separation insulator passing through an interlayer insulation layer to reduce the distance between adjacent contacts, allowing for self-aligned contact formation and reducing the margin for contact placement, thereby enabling closer transistor placement and increased integration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If transistors are placed closer together to increase integration degree, then device size is reduced, but electrical interference and leakage between transistors increase
Solution Approach 1:
A separation insulator is introduced as an intermediary element between adjacent transistors. This insulator extends from the semiconductor substrate through the interlayer insulation layer, creating physical and electrical isolation between closely spaced transistors. The separation insulator acts as a mediator that enables close transistor placement while preventing harmful electrical interference and leakage, thus resolving the contradiction between high integration and reliability.
2Length of moving object
If distance between transistors is reduced to decrease device size, then integration degree increases, but manufacturing precision requirements increase
Solution Approach 1:
The separation insulator is formed in advance before contact formation, establishing predetermined isolation regions. This preliminary action defines the exact positions where contacts can be safely placed adjacent to transistors without risking electrical interference. By pre-establishing the separation insulator structure, the manufacturing process gains a reference framework that simplifies subsequent contact alignment and reduces precision requirements.
Solution Approach 2:
The separation insulator serves as a mediator that decouples the positioning of contacts from the transistor structures. Instead of directly measuring and aligning contacts to transistor boundaries with high precision, the separation insulator provides a intermediate reference structure that contacts can be aligned to with relaxed tolerance, thereby reducing manufacturing precision requirements while maintaining small transistor spacing.
3Area of stationary object
If separation insulator is used to enable closer transistor placement, then device size is reduced, but device complexity increases
Solution Approach 1:
The separation insulator is designed to perform multiple functions simultaneously: it provides electrical isolation between transistors, serves as a structural reference for contact alignment, and enables close transistor spacing for high integration. This multi-functionality reduces the need for additional separate structures, thereby limiting the increase in device complexity while achieving compact transistor placement.
Solution Approach 2:
The separation insulator is implemented as a segmented structure that extends selectively at boundaries of specific transistors rather than uniformly across the entire device. This segmentation approach allows the insulator to be placed only where needed for isolation, minimizing the addition of structural complexity while effectively enabling close transistor placement in critical regions.
Data Source
AI summary
A semiconductor device includes a semiconductor substrate, a transistor, a first interlayer insulation layer, a plurality of contacts, and a separation insulator. The transistor is on the semiconductor substrate. The transistor includes a gate structure, and source and drain regions. The first interlayer insulation layer is on the gate structure and the source and drain regions of the transistor. The plurality of contacts pass through the first interlayer insulation layer and are electrically connected to the source and drain regions of the transistor. The separation insulator passes through the first interlayer insulation layer and extends to an inside of the semiconductor substrate at a boundary of the transistor. The plurality of contacts include an adjacent contact that is adjacent to the separation insulator and is spaced apart from the gate structure. The first interlayer insulation layer is interposed between the adjacent contact and the gate structure.