Semiconductor Layer Contact via Laser Grooving Across Isolation
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Solution Overview
Problem
Semiconductor devices with buried oxide layers exhibit significant drift and increased production costs due to complex processes required for creating electrical contacts between semiconductor layers separated by isolating layers, such as in SOI wafers, which affect their stability and performance.
Innovation Solution
A method involving laser grooving to create recrystallized conductive layers between semiconductor layers, bypassing the need for photolithography and simplifying the process by forming a conductive path over the isolating connection layer, thereby reducing production costs and enhancing stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a straight forward contact method is used to bridge the oxide layer, then electrical contact is achieved, but manufacturing complexity increases due to multiple extra process steps
Solution Approach 1:
The laser grooving operation combines multiple functions into a single step: it creates the physical groove through the oxide layer, generates the conductive recrystallized material, and forms the contact structure. This merges what would otherwise require separate etching, contact deposition, and patterning steps
Solution Approach 2:
The traditional mechanical and chemical process sequence (photolithography, sputtering, etching, deposition) is replaced with a laser-based physical process. The laser groove method uses optical energy to directly modify the material structure, substituting complex multi-step mechanical fabrication with a more streamlined thermal field approach
2Reliability
If multiple extra process steps are used to create contact, then electrical contact is achieved, but production time increases
Solution Approach 1:
The laser grooving process performs the contact creation action in advance during the fabrication sequence, integrating it with the membrane release process. By combining these operations, the method eliminates subsequent separate contact formation steps that would extend production time
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively reduces contact resistance and improves the stability of semiconductor devices by forming a conductive connection along the edges of the device, minimizing production costs and maintaining device performance over time.
Implementation Method 1
laser grooving at least one laser groove in the stack through the first semiconductor layer and the isolating connection layer and partly in the second semiconductor layer, leaving a remainder of the second semiconductor layer. After the laser grooving a recrystallized conductive layer is obtained at an edge of the layered stack, which connects the first semiconductor layer and the second semiconductor layer. This recrystallized conductive layer is at least obtained from molten material of the first semiconductor layer.
Implementation Method 2
After the laser grooving a recrystallized conductive layer is obtained at an edge of the layered stack
Implementation Method 3
laser grooving at least one laser groove in the stack through the first semiconductor layer and the isolating connection layer and partly in the second semiconductor layer
Data Source
AI summary
A method for creating an electrical contact between semiconductor layers which are separated by an isolating connection layer. The method comprising: providing a layered stack comprising at least a first semiconductor layer, an isolating connection layer, and a second semiconductor layer, wherein the isolating connection layer is between first semiconductor layer and the second semiconductor layer; laser grooving at least one laser groove in the stack through the first semiconductor layer and the isolating connection layer and partly in the second semiconductor layer, leaving a remainder of the second semiconductor layer; cutting the remainder of the second semiconductor layer.