Semiconductor Contact Layer Structure for Low-Resistance Interfaces
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving optimal optical-electrical characteristics and process stability, particularly in the design of light-emitting diodes, where contact resistance and interfacial compound formation affect efficiency and longevity.
Innovation Solution
The semiconductor device incorporates a specific structure with a first p-type or n-type layer containing oxygen and a second metal element, a first semiconductor layer, and a metal element-containing structure, optimized with a thickness of the p-type or n-type layer less than or equal to 20 nm, and an insulating layer, which improves contact resistivity and prevents interfacial compound formation, enhancing the device's optical-electrical performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional semiconductor device structure is used, then the device can be manufactured with standard processes, but the contact resistance is high and optical-electrical characteristics are suboptimal
Solution Approach 1:
The device is divided into multiple functional layers including a first semiconductor layer, a second semiconductor layer, a p-type or n-type layer, and an insulating layer. This segmentation allows each layer to be optimized for specific functions, improving overall optical-electrical characteristics while managing complexity through modular design
Solution Approach 2:
A p-type or n-type layer containing oxygen and a second metal element is introduced as an intermediary layer between the first semiconductor layer and the metal element-containing structure. This intermediate layer reduces contact resistance and prevents interfacial compound formation, resolving the contradiction between reliability and manufacturing complexity
2Reliability
If the p-type or n-type layer thickness is increased, then contact resistance may be reduced, but interfacial compound formation increases and process stability decreases
Solution Approach 1:
The thickness of the p-type or n-type layer is precisely controlled to be less than or equal to 20 nm. This parameter optimization achieves low contact resistance while preventing excessive interfacial compound formation and maintaining process stability. The oxygen content and metal element composition are also optimized to balance these competing requirements
3Ease of manufacture
If standard metal element-containing structures are used, then manufacturing is simpler, but interfacial compound formation occurs and device longevity is reduced
Solution Approach 1:
The p-type or n-type layer containing oxygen and a second metal element serves as a protective intermediary between the semiconductor layer and the metal electrode. This intermediate layer prevents direct contact between reactive metals and semiconductor materials, avoiding harmful interfacial compound formation and extending device lifespan while remaining compatible with standard manufacturing processes
Data Source
AI summary
A semiconductor device is provided, which includes an active region, a first semiconductor layer, a first metal element-containing structure, a first p-type or n-type layer, a second semiconductor layer and an insulating layer. The active region has a first surface and a second surface. The first semiconductor layer is at the first surface. The first metal element-containing structure covers the first semiconductor layer and comprising a first metal element. The first p-type or n-type layer is between the first semiconductor layer and the first metal element-containing structure. The second semiconductor layer is between the first semiconductor layer and the first p-type or n-type layer. The insulating layer covers a portion of the first semiconductor layer and a portion of the second semiconductor. The first p-type or n-type layer includes an oxygen element (O) and a second metal element and has a thickness less than or equal to 20 nm.