Semiconductor Contact Layout for Source/Drain Leakage Isolation
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Solution Overview
Problem
The reliability of semiconductor structures is compromised due to short-channel effects and current leakage in source/drain regions, particularly in high-density integrated circuits, where the enhanced electric field affects doped ions, leading to potential short circuits and reduced performance.
Innovation Solution
A semiconductor structure design with a gate structure, doped regions having varying ion concentrations, and an electrical contact layer positioned away from the gate structure, along with a dielectric layer to prevent current leakage and short circuits, is implemented. This design ensures that most doped ions are far from the gate structure, reducing the impact of the electric field and maintaining a safe distance from the gate structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the critical dimension of semiconductor device is continuously decreased to increase device density, then device density is improved, but short-channel effect leads to leakage problem in source/drain region
Solution Approach 1:
The patent applies local quality by creating a non-uniform doping concentration distribution within the source/drain region. Specifically, the doping concentration is higher near the gate structure and lower farther from it, forming a gradient profile. This localized variation in doping quality allows the region close to the gate to better control carrier flow and reduce leakage, while maintaining overall high device density through efficient space utilization.
Solution Approach 2:
The patent changes the doping concentration parameter within the source/drain region to address leakage. By implementing a doping gradient where concentration varies with position (higher near gate, lower farther away), the electrical properties of the source/drain region are optimized. This parameter change enables better control over the electric field distribution, reducing short-channel effects and leakage current while maintaining the scaled dimensions required for high density.
2Reliability
If doped ions are positioned closer to gate structure to improve electrical contact, then electrical conductivity is improved, but electric field affects doped ions causing short circuit and reduced performance
Solution Approach 1:
The patent implements local quality through spatially varying doping concentration in the source/drain region. The doping concentration is locally adjusted to be higher near the gate structure where electrical contact is needed, and lower in regions farther from the gate where electric field effects are more problematic. This creates zones with different electrical properties optimized for their specific functions: high conductivity near the gate interface and reduced susceptibility to electric field effects farther away.
Solution Approach 2:
The doping gradient acts as an intermediary between the gate structure and the source/drain contact regions. By creating a gradual transition in doping concentration rather than an abrupt change, the gradient mediates the interaction between the high electric field near the gate and the doped regions. This intermediate doping profile allows controlled electrical contact while progressively reducing the impact of the electric field on doped ions, preventing short circuits and performance degradation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design effectively prevents current leakage and short circuits, enhancing the reliability and performance of the semiconductor structure by ensuring doped ions are less affected by the electric field and maintaining a safe distance from the gate structure.
Implementation Method 1
a dielectric layer, where the dielectric layer fills a space between the electrical contact layer and the gate structure
Implementation Method 2
performing ion implantation on the substrate to form a plurality of doped regions in the substrate
Data Source
AI summary
The present disclosure provides a semiconductor structure and a forming method thereof, including: a gate structure is located on a substrate; a plurality of doped regions, located in the substrate, and located at two sides of the gate structure, the doped region includes a first doped region and a second doped region, a concentration of doped ions in the first doped region is greater than a concentration of doped ions in the second doped region, and the first doped region is far from a sidewall of the gate structure; an electrical contact layer, the electrical contact layer is in contact with a sidewall of the first doped region far from the gate structure, and a top surface of the electrical contact layer is higher than a surface of the substrate; and a dielectric layer, the dielectric layer fills a space between the electrical contact layer and the gate structure.