Semiconductor Contact Structure for Light-Emitting Efficiency
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Solution Overview
Problem
Current semiconductor devices face challenges in enhancing light-emitting efficiency due to non-radiative recombination effects at the periphery regions, which reduces the effectiveness of light emission.
Innovation Solution
The semiconductor device incorporates a specific contact structure configuration, including a first contact structure on the semiconductor stack and a second contact structure between the conductive layer and the stack, along with an intermediate structure and electrodes, to create a lower resistance path for current flow and reduce non-radiative recombination, enhancing light-emitting efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If current flows through the periphery regions of the semiconductor stack, then the device structure is simple, but non-radiative recombination effects increase and light-emitting efficiency decreases
Solution Approach 1:
The contact structure is divided into multiple segments: a first contact structure on the semiconductor stack, a second contact structure on the conductive layer, and an intermediate structure connecting them. This segmentation creates multiple current flow paths that guide current away from the periphery regions, reducing non-radiative recombination while maintaining structural organization.
Solution Approach 2:
An intermediate structure is introduced as a mediator between the first contact structure on the semiconductor stack and the second contact structure on the conductive layer. This intermediate structure facilitates controlled current flow through the active structure, preventing current from flowing through harmful periphery regions while maintaining electrical connectivity.
2Loss of energy
If a complex contact structure configuration is implemented to reduce non-radiative recombination, then light-emitting efficiency improves, but device complexity increases
Solution Approach 1:
The contact structure configuration applies local quality by placing contacts at specific locations: the first contact structure is positioned on the semiconductor stack to access the active region, the second contact structure is positioned on the conductive layer, and the intermediate structure connects them. This localized arrangement optimizes current flow paths to avoid periphery regions while maintaining overall structural simplicity.
3Loss of energy
If current is confined to the central region, then light-emitting efficiency improves, but current flow resistance increases
Solution Approach 1:
The contact structure is configured in advance to establish low-resistance current paths before current flow occurs. The first contact structure on the semiconductor stack and the second contact structure on the conductive layer are positioned to create direct electrical connections through the intermediate structure, ensuring current flows through the active structure without encountering high resistance, while still being confined to the central region to maximize light-emitting efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively confines current flow to the central region of the semiconductor stack, reducing non-radiative recombination and enhancing light-emitting efficiency by allowing light to be emitted with improved peak wavelengths and increased reliability.
Implementation Method 1
create a lower resistance path for current flow
Implementation Method 2
emitting light under the principle of transforming electrical energy to optical energy by the combination of electrons and holes injected to the active structure
Data Source
AI summary
A semiconductor device includes a conductive layer, a semiconductor stack, a first contact structure, an intermediate structure, a second contact structure, a first electrode and a second electrode. The semiconductor stack is disposed on the conductive layer. The first contact structure is disposed on the semiconductor stack. The intermediate structure encloses the first contact structure. The second contact structure is between the conductive layer and the semiconductor stack. The first electrode is on the conductive layer and separated from the semiconductor stack. The second electrode is on the intermediate structure.