Method for manfacturing semiconductor device for reducing partcle-induced defects
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Solution Overview
Problem
As semiconductor devices become smaller and more complex, the influence of particle-induced defects during manufacturing becomes more significant, affecting manufacturing yield and device performance.
Innovation Solution
A method for manufacturing semiconductor structures that involves forming a first insulating layer, a conductive contact, a second insulating layer with an opening, a conductive line structure, a plasma oxide layer, a wet cleaning process using an aqueous solution with negatively charged ions, a capping layer, and an etching back process to reduce particle-induced defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If semiconductor devices are made smaller to increase component density, then device functionality and integration are improved, but particle-induced defects become more significant and manufacturing yield deteriorates
Solution Approach 1:
The method performs preliminary cleaning actions by forming a plasma oxide layer before the main cleaning step, and then uses a wet cleaning process with negatively charged ions to remove particles and impurities before subsequent processing steps, thereby preventing particle-induced defects in advance
Solution Approach 2:
The invention changes the chemical parameters of the cleaning solution by using an aqueous solution containing negatively charged ions (such as carbonate or bicarbonate ions) at specific concentrations and pH levels, which enhances the removal of positively charged particles and impurities from the semiconductor structure
2Ease of manufacture
If conventional cleaning processes are used after plasma oxide layer formation, then manufacturing simplicity is maintained, but particle-induced defects increase and manufacturing yield deteriorates
Solution Approach 1:
The invention modifies the cleaning process by changing the chemical composition parameters of the aqueous solution to include negatively charged ions at specific concentrations and pH ranges, which enables effective particle removal while maintaining a relatively simple single-step cleaning process
3Reliability
If positively charged ions remain on the plasma oxide layer surface, then oxide layer formation is complete, but particle-induced defects increase during subsequent etching back process
Solution Approach 1:
The invention converts the harmful positively charged ions remaining on the plasma oxide layer into a beneficial situation by using negatively charged ions in the wet cleaning solution to neutralize and remove these positive ions, thereby preventing particle formation during the etching back process while maintaining the integrity of the oxide layer
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively reduces particle-induced defects, enhancing manufacturing yield and device performance by removing chemical and particle impurities and positively charged ions, thereby preventing the formation of undesired crystals or particles.
Implementation Method 1
forming a plasma oxide layer to cover exposed surfaces of the conductive line structure, the second insulating layer, and the conductive contact
Implementation Method 2
performing a wet cleaning process by using an aqueous solution containing negatively charged ions
Implementation Method 3
performing an etching back process to remove the capping layer above the contact void
Data Source
AI summary
A method for manufacturing a semiconductor structure including the following steps is provided. First, a first insulating layer with a conductive contact is formed over a substrate, and a second insulating layer having an opening is formed on the first insulating layer, wherein the opening corresponds to and exposes a top surface of the conductive contact. A conductive line structure is formed in the opening, wherein a contact void is formed between the second insulating layer and the conductive line structure, and then a plasma oxide layer is conformally deposited over the substrate. Then, a wet cleaning process is performed by using an aqueous solution containing negatively charged ions. A capping layer is formed on the plasma oxide layer, the capping layer filling the contact void, and an etching back process to remove the capping layer above the contact void.