Semiconductor Contact Structure With Nitrile Transition Layer
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Solution Overview
Problem
The contact resistance between polysilicon and metal layers in DRAM structures becomes a significant factor affecting electrical performance as the size of polysilicon-metal plugs shrinks during DRAM process scaling, leading to reduced conductivity and electrical performance.
Innovation Solution
A semiconductor structure is developed with a nitrile or isonitrile transition layer between the semiconductor conductive layer and the metal conductive layer, which reduces contact resistance and enhances conductivity by forming a dense layer on the semiconductor surface and serving as an intermediate bonding layer, improving charge mobility and conductivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If polysilicon-metal plug size is reduced during DRAM process scaling, then device integration density is improved, but contact resistance between polysilicon and metal layers increases
Solution Approach 1:
A nitrile or isonitrile transition layer is introduced between the polysilicon layer and the metal conductive layer to serve as an intermediary substance. This transition layer forms a dense monolayer on the polysilicon surface that facilitates better electrical contact with the metal layer, thereby reducing contact resistance despite the reduced plug size.
Solution Approach 2:
The surface properties of the polysilicon layer are modified by treating it with a nitrile or isonitrile organic solution, which changes the surface chemistry and creates a transition layer with optimized electrical properties for reduced contact resistance.
2Area of moving object
If polysilicon-metal plug size is reduced during DRAM process scaling, then device integration density is improved, but conductivity of the conductive structure deteriorates
Solution Approach 1:
The nitrile or isonitrile transition layer acts as a mediator that creates a three-dimensional mesh conductive path between the polysilicon and metal layers, maintaining high conductivity even as the overall plug dimensions are reduced for higher integration density.
Solution Approach 2:
The conductive structure becomes a composite system consisting of polysilicon, nitrile/isonitrile transition layer, and metal conductive layer, where each material contributes its unique properties to achieve optimal overall conductivity in the scaled-down structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The nitrile or isonitrile transition layer effectively reduces contact resistance and improves conductivity by forming a three-dimensional mesh conductive path, enhancing the electrical performance of the semiconductor structure.
Implementation Method 1
a nitrile or isonitrile transition layer is formed on the semiconductor conductive layer
Data Source
AI summary
A semiconductor structure includes a conductive structure. A method for preparing the conductive structure includes: forming a semiconductor conductive layer; forming a nitrile or isonitrile transition layer on the semiconductor conductive layer; and forming a metal conductive layer on the nitrile or isonitrile transition layer.