Semiconductor Contact Layer for Low-Resistance Phosphide Interfaces
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor devices, particularly light-emitting diodes, face challenges in achieving optimal optical-electrical characteristics and process stability due to issues with contact resistance and interfacial compound formation between metal elements and semiconductor layers.
Innovation Solution
The semiconductor device incorporates a first contact structure with a p-type or n-type layer containing oxygen and a second metal element, physically contacting a semiconductor layer with a phosphide or arsenide compound, and a metal element-containing structure, which improves contact resistivity and prevents interfacial compound formation, thereby enhancing optical-electrical performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a metal element-containing structure directly contacts a semiconductor layer with phosphide or arsenide compound, then electrical conductivity is improved, but interfacial compound formation occurs and contact resistance increases
Solution Approach 1:
The patent introduces a p-type or n-type layer as an intermediary between the metal element-containing structure and the semiconductor layer. This intermediate layer contains oxygen and a second metal element, and has a thickness of less than or equal to 20 nm. The intermediary layer prevents direct contact between the metal and phosphide/arsenide compound, thereby preventing harmful interfacial compound formation while maintaining low contact resistance through optimized material composition and thickness control.
2Reliability
If the p-type or n-type layer thickness is increased to improve contact properties, then contact resistance decreases, but the layer becomes too thick and affects device performance
Solution Approach 1:
The patent optimizes the thickness parameter of the p-type or n-type layer to be less than or equal to 20 nm. This parameter change achieves the optimal balance between reducing contact resistance and maintaining device performance. The specific thickness range is carefully selected to ensure the layer is thin enough to avoid performance degradation while thick enough to provide effective contact properties and prevent interfacial compound formation.
3Ease of manufacture
If the semiconductor device structure is simplified to reduce manufacturing complexity, then manufacturing cost decreases, but contact resistance control and process stability deteriorate
Solution Approach 1:
The patent employs a composite structure for the p-type or n-type layer containing oxygen and a second metal element. This composite material approach allows for improved contact resistance control and process stability while maintaining reasonable manufacturing complexity. The specific composition and structure of the intermediate layer are designed to achieve optimal electrical properties without requiring excessively complex manufacturing processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances contact resistivity and process stability, improving the overall optical-electrical characteristics of the semiconductor device, suitable for applications in illumination, medical, display, communication, and sensing systems.
Implementation Method 1
The first p-type or n-type layer physically contacts the first semiconductor layer and the first metal element-containing structure
Data Source
AI summary
A semiconductor device is provided, which includes a semiconductor stack and a first contact structure. The semiconductor stack includes an active layer and has a first surface and a second surface. The first contact structure is located on the first surface and includes a first semiconductor layer, a first metal element-containing structure and a first p-type or n-type layer. The first metal element-containing structure includes a first metal element. The first p-type or n-type layer physically contacts the first semiconductor layer and the first metal element-containing structure. The first p-type or n-type layer includes an oxygen element (O) and a second metal element and has a thickness less than or equal to 20 nm, and the first semiconductor layer includes a phosphide compound or an arsenide compound.