Semiconductor Contact Plasma Damage Reduction
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Solution Overview
Problem
The challenge in semiconductor integrated circuit devices is the susceptibility of dielectric films to damage from electric charges generated during plasma-based processes, which affects the electrical characteristics of capacitors in devices like DRAMs, especially as device sizes decrease and cross-sectional areas become smaller.
Innovation Solution
A semiconductor integrated circuit device design that includes a plasma damage reduction unit with a lower electrode conformably deposited on voids and upper surfaces, featuring a thinner dielectric film in voids compared to surfaces, which helps to mitigate charge accumulation and damage by allowing electric charges to dissipate, thereby improving the electrical characteristics of capacitors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If dielectric films are made thinner to increase capacitance, then capacitance increases, but the films become more susceptible to damage from electric charges
Solution Approach 1:
The patent applies local quality by creating a non-uniform dielectric film thickness distribution. The dielectric film is intentionally made thinner in specific regions (over contacts and bit lines) and thicker in other regions. This local variation allows the film to better withstand plasma-induced electric charges in critical areas while maintaining overall capacitance requirements, thus resolving the contradiction between thin film capacitance improvement and film damage susceptibility.
2Productivity
If plasma-based processes are used for deposition and etching, then manufacturing efficiency improves, but electric charges are generated that damage the dielectric film
Solution Approach 1:
The patent converts the harmful effect of plasma-induced electric charges into a beneficial outcome. By strategically designing the dielectric film thickness to be thinner over conductive structures (contacts and bit lines), the patent allows electric charges generated during plasma processes to safely dissipate through these conductive paths. This transforms the previously harmful charge accumulation into a controlled charge dissipation mechanism, enabling continued use of efficient plasma-based manufacturing processes while protecting the dielectric film from damage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces damage to dielectric films from plasma-induced electric charges, enhancing the electrical performance and reliability of semiconductor integrated circuit devices by preventing charge accumulation and maintaining the integrity of the dielectric films.
Implementation Method 1
a lower electrode conformably on the void of the contact and on the upper surface of the contact
Implementation Method 2
a process using plasma as described above may cause unnecessary damage to the underlying layer of a film being deposited or etched. For example, the dielectric film may be charged with electric charges generated by the plasma
Data Source
AI summary
A semiconductor integrated circuit device includes a first interlayer insulation film having a contact therein. The contact has an upper surface and including a void therein having an open upper portion. The device further includes a plasma damage reduction unit including a lower electrode conformably on the void of the contact and on the upper surface of the contact, a dielectric film on the lower electrode, and an upper electrode on the dielectric film. The thickness of the portion of the dielectric film in the void is smaller than the thickness of the portion of the dielectric film on the upper surface of the contact.