Semiconductor Contact Plug Anchor Effect for Crack Prevention

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Solution Overview

Problem

The existing semiconductor device configurations suffer from high thermal stress at the triple-contact portion, leading to potential cracks in the first metal layer that can extend into the active region, compromising device characteristics.

Innovation Solution

Incorporating contact plugs in the intermediate region between the peripheral and active regions, extending along the edge of the protective insulating film, which helps to suppress thermal expansion of the first metal layer, thereby reducing the likelihood of cracks forming in the active region.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If contact plugs extend only toward the edge portion of the protective insulating film (along x-direction), then thermal expansion in y-direction is suppressed, but thermal expansion in x-direction is not suppressed, resulting in insufficient crack prevention

Engineering Contradiction:
Improvecrack suppressionVSAvoidcontact plug configuration
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The contact plugs are configured to extend in two directions (x-direction and y-direction) rather than only one direction, adding a dimensional aspect to the anchor effect. This multi-directional extension suppresses thermal expansion in both x and y directions, effectively preventing cracks from propagating toward the active region while maintaining structural simplicity

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The contact plugs have different extension characteristics in different regions: in the intermediate region, they extend toward the edge portion (x-direction), while in the peripheral region, they extend along the edge portion (y-direction). This local differentiation optimizes the anchor effect in each specific region to prevent cracks effectively

Inventive Principle:
Principle #3Local quality

2Reliability

If the first metal layer is made extensive to cover both active and peripheral regions, then thermal stress is generated at the triple-contact portion, but crack propagation into the active region can be prevented

Engineering Contradiction:
Improveactive region protectionVSAvoidthermal stress at triple-contact portion
Core Design Contradiction:
ReliabilityVSStress or pressure

Solution Approach 1:

The contact plugs serve as intermediary anchor points between the first metal layer and the substrate. By extending into the intermediate region and peripheral region, they provide localized anchoring that reduces thermal stress concentration at the triple-contact portion while still protecting the active region from crack propagation

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The substrate is divided into three regions (active region, intermediate region, peripheral region) with different contact plug configurations. This segmentation allows each region to have optimized stress management: the active region is protected from cracks, the intermediate region provides transition and anchoring, and the peripheral region handles thermal expansion, thereby reducing overall thermal stress

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration effectively suppresses the generation of cracks from the triple-contact portion to the active region, enhancing the reliability of the semiconductor device by managing thermal stress through the anchor effect of the contact plugs.

Implementation Method 1

thermal expansion of an electrode layer located on the contact plug(s) can be suppressed

Methodology Applied
Scientific EffectThermal expansion: Thermal Expansion

Implementation Method 2

managing thermal stress through the anchor effect of the contact plugs

Methodology Applied
Scientific EffectAnchor effect:

Data Source

PatentUS10522465B2Semiconductor device
Publication Date: 2019.12.31 DENSO CORP
  • US10522465B2 patent drawing
  • US10522465B2 patent drawing
  • US10522465B2 patent drawing

AI summary

A semiconductor device may include: a semiconductor substrate; an interlayer insulating film; a contact plug penetrating the interlayer insulating film; a first metal layer covering a surface of the interlayer insulating film; a protective insulating film covering a part of of the first metal layer; and a second metal layer covering the surface of the first metal layer. A peripheral region may be a region in which the protective insulating film is located; an active region may be a region in which a plurality of first parts of the contact plug is located; and an intermediate region may be a region which is located between the peripheral region and the active region and in which a second part of the contact plug is located. The first parts may extend toward an edge portion of the protective insulating film, and the second part may extend along the edge portion.