Semiconductor Contact Plug Dual Silicon Layer CVD Filling
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Solution Overview
Problem
As semiconductor devices integrate more densely, the small, high-aspect-ratio contact holes in these devices pose a challenge for filling with conductive materials without creating seams or voids, which can increase contact resistance.
Innovation Solution
A semiconductor device and manufacturing method involving a contact plug formed from alternating silicon layers, where the first layer is created using a compound with at least two silicon atoms and the second layer using a compound with fewer silicon atoms, both deposited via chemical vapor deposition, ensuring complete filling of the contact hole without seams or voids.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If contact hole size is reduced to increase integration density, then device integration density is improved, but contact resistance increases due to seam or void formation
Solution Approach 1:
The contact hole filling process is segmented into multiple sequential CVD steps, each depositing a portion of the conductive material. This segmentation allows better control over the filling process, ensuring complete penetration to the substrate surface and preventing void formation in high-aspect-ratio contact holes, thus maintaining low contact resistance while supporting reduced contact hole dimensions for higher integration density.
Solution Approach 2:
The conductive material is preliminarily deposited in controlled layers before final contact hole completion. This preliminary action ensures that the contact hole is properly filled and sealed from the bottom up, preventing void formation and ensuring reliable electrical connection even in scaled-down contact holes with high aspect ratios.
2Productivity
If contact hole aspect ratio increases due to scaling, then integration density is improved, but manufacturing precision deteriorates due to difficulty in filling without voids
Solution Approach 1:
The filling process is divided into multiple sequential CVD deposition steps, each adding a controlled layer of conductive material. This segmentation enables precise control over the filling process in high-aspect-ratio contact holes, ensuring complete penetration to the substrate surface and preventing void formation, thereby maintaining high manufacturing precision while supporting scaled-down device dimensions.
Solution Approach 2:
The conductive material is preliminarily deposited in controlled layers before final contact hole completion. This preliminary action ensures that the contact hole is properly filled and sealed from the bottom up, preventing void formation and ensuring reliable electrical connection even in scaled-down contact holes with high aspect ratios.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the formation of a contact plug with improved electrical characteristics and reliability by preventing the formation of seams or voids, thus enhancing the integration density and performance of semiconductor devices.
Implementation Method 1
The first silicon layer is formed from a first compound including at least two silicon atoms, and is formed in the contact hole to contact a top surface of the conductive area and a side wall of the first pattern
Implementation Method 2
The second silicon layer is formed from a second compound including a number of silicon atoms less than the number of the silicon atoms of the first compound, and is formed on the first silicon layer, filling a remaining space of the contact hole
Data Source
AI summary
A semiconductor device includes a substrate having a conductive area, a first pattern formed on the substrate and having a contact hole through which the conductive area is exposed, and a contact plug in the contact hole. The contact plug includes first and second silicon layers. The first silicon layer, formed from a first compound including at least two silicon atoms, is formed in the contact hole to contact a top surface of the conductive area and a side wall of the first pattern. The second silicon layer, formed from a second compound including a number of silicon atoms less than the number of the silicon atoms of the first compound, is formed on the first silicon layer and fills a remaining space of the contact hole, the second silicon layer being spaced apart from the first pattern at an entrance of the contact hole.