Semiconductor Contact Plug With Penetrating Plate For Vertical Memory
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Solution Overview
Problem
The integration density of semiconductor memory devices has increased with the demand for processing massive data, but existing technologies face challenges in forming stable contact plugs with conductive patterns in non-volatile memory devices with vertical transistor structures, leading to issues with contact resistance and potential electrical shorts.
Innovation Solution
A semiconductor device and manufacturing method involving a contact plug with a contact plate and body, where the contact plate has a circular structure and penetrates the conductive pattern, and a barrier layer covers the sidewall, ensuring stable electrical connection and reducing contact resistance by increasing the contact area, while the wet etching process removes residues to prevent electrical shorts.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If contact plugs are formed to penetrate conductive patterns in vertical transistor structures, then electrical connection is established, but contact resistance increases and electrical shorts may occur
Solution Approach 1:
The contact plug is divided into two distinct parts: a contact plate that penetrates the conductive pattern and a contact body that extends through the insulation layer. This segmentation allows the contact plate to establish reliable electrical connection through the conductive pattern while the contact body provides a separate pathway for electrical connection, thereby reducing contact resistance and preventing electrical shorts between different conductive layers.
Solution Approach 2:
The contact plug transitions from a conventional single-dimensional structure to a two-dimensional structure with the contact plate penetrating horizontally through the conductive pattern and the contact body extending vertically through the insulation layer. This dimensional change enables the contact plug to establish electrical connections in multiple directions, improving connection stability while avoiding short circuits.
2Productivity
If integration density is increased with vertical transistor structures, then more data can be processed, but forming stable contact plugs becomes more difficult
Solution Approach 1:
By segmenting the contact plug into a contact plate and contact body, the invention enables precise formation of each part through separate process steps. The contact plate can be precisely formed to penetrate the conductive pattern while the contact body is formed to extend through the insulation layer, maintaining manufacturing precision even as integration density increases.
Solution Approach 2:
The contact plate is formed first to penetrate the conductive pattern, establishing a preliminary electrical connection pathway. Subsequently, the contact body is formed to extend through the insulation layer and connect to upper conductive patterns. This preliminary action sequence ensures stable contact plug formation in high-density vertical transistor structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides a stable and efficient contact between the contact plug and the conductive pattern, reducing contact resistance and preventing electrical shorts, thereby enhancing the performance and reliability of semiconductor memory devices.
Implementation Method 1
performing a wet etching process to remove the portion of the conductive pattern
Data Source
AI summary
A method for manufacturing a semiconductor device includes forming a conductive pattern on a substrate, forming a filling insulation layer covering the conductive pattern, forming a contact hole in the filling insulation layer and adjacent to the conductive pattern, forming an opening in the conductive pattern by removing a portion of the conductive pattern adjacent to the contact hole such that the opening is connected to the contact hole, and forming a contact plug filling the contact hole and the opening. A width of the opening is greater than a width of the contact hole.