Semiconductor Contact Plug Fabrication via Protective Insulating Fence Patterns
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Solution Overview
Problem
Current methods for fabricating semiconductor devices face challenges in reliably forming contact plugs with precise dimensions and preventing deformation during the etching process, which affects the stability and performance of the devices.
Innovation Solution
A method involving the formation of insulating patterns, insulating fences, and protective patterns on a semiconductor device, where the protective patterns act as etching masks to prevent deformation of insulating fences and ensure accurate formation of contact holes and plugs, utilizing a sequence of etching and protective layer formation to maintain structural integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional etching methods are used to form contact holes, then the etching process can be completed, but the insulating fences deform and contact plug precision deteriorates
Solution Approach 1:
A protective pattern is formed on the insulating fence before the etching process begins. This preliminary protective layer prevents the insulating fence from deforming during etching, ensuring both the stability of the insulating fence and the precision of the resulting contact holes.
Solution Approach 2:
The protective pattern acts as an intermediary between the etching process and the insulating fence. It absorbs or distributes the mechanical stress during etching, preventing direct contact between the etching tools and the insulating fence, thereby maintaining both fence stability and contact hole precision.
2Stability of the object's composition
If protective patterns are formed on insulating fences, then deformation is prevented, but the fabrication process complexity increases
Solution Approach 1:
The protective pattern formation is merged with existing fabrication steps. The protective pattern is formed using the same patterning and deposition processes already employed in the fabrication sequence, integrating the protection mechanism into the existing workflow rather than adding entirely new process steps.
Solution Approach 2:
The protective pattern serves multiple functions: it protects the insulating fence during etching, defines the contact hole boundaries, and can be removed together with other sacrificial layers. This multi-functionality reduces the need for separate dedicated protection steps, thereby limiting the increase in fabrication complexity.
Data Source
AI summary
A method of fabricating a semiconductor device includes forming interconnection structures on a lower structure. An insulating layer is formed between the interconnection structures. The insulating layer is patterned to form insulating patterns. An insulating fence is formed between the insulating patterns. A first protective pattern is formed on the insulating fence. The insulating patterns are etched after the forming of the first protective pattern to form contact holes. Contact plugs are formed in the contact holes.