Semiconductor Contact Plug Segmentation for Parasitic Transistor Control
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Solution Overview
Problem
Semiconductor devices face challenges in maintaining robustness and breakdown voltage due to the risk of unwanted parasitic bipolar transistor activation, especially when handling high currents and unclamped inductive loads, which can lead to decreased ruggedness and increased device temperatures.
Innovation Solution
The semiconductor device design incorporates multiple contact plugs between gate electrodes and source regions, with only the outermost plugs directly adjoining the source regions, to effectively conduct avalanche currents and reduce the risk of parasitic transistor activation, thereby enhancing breakdown voltage and ruggedness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multiple contact plugs are arranged between gate electrodes and source regions, then avalanche current conduction is improved and parasitic bipolar transistor activation is reduced, but device complexity increases
Solution Approach 1:
The contact plug structure is segmented into multiple discrete plugs arranged between the gate electrodes and source regions. Instead of a single contact point, multiple contact plugs are distributed across the device structure, with specific plugs positioned to conduct avalanche currents while avoiding direct contact with source regions. This segmentation allows the device to handle high currents more effectively and reduces the risk of parasitic bipolar transistor activation.
2Reliability
If contact plugs directly adjoin source regions, then electrical connection is improved, but parasitic bipolar transistor activation risk increases
Solution Approach 1:
Different contact plugs are assigned different functions based on their local position within the device structure. The outermost contact plugs are positioned to directly adjoin source regions for electrical connection, while intermediate contact plugs are strategically placed to conduct avalanche currents without directly contacting source regions. This local differentiation of contact plug functions allows the device to achieve both good electrical connection and reduced parasitic activation risk.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design effectively reduces the activation of unwanted parasitic bipolar transistors, leading to increased breakdown voltage and improved ruggedness of the semiconductor device, even under high current and temperature stress conditions.
Implementation Method 1
effectively conduct avalanche currents and reduce the risk of parasitic transistor activation
Data Source
AI summary
A semiconductor device includes a semiconductor body having a first surface and second surface opposite to the first surface in a vertical direction, and a plurality of transistor cells at least partly integrated in the semiconductor body. Each transistor cell includes at least two source regions, first and second gate electrodes spaced apart from each other in a first horizontal direction and arranged adjacent to and dielectrically insulated from a continuous body region, a drift region separated from the at least two source regions by the body region, and at least three contact plugs extending from the body region towards a source electrode in the vertical direction. The at least three contact plugs are arranged successively between the first and second gate electrodes. Only the two outermost contact plugs that are arranged closest to the first and second gate electrodes, respectively, directly adjoin at least one of the source regions.