Semiconductor Contact Plug with Segmented Silicide and Conductor Layers
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Solution Overview
Problem
The existing semiconductor apparatuses have insufficiently optimized electrical properties of contact plugs connected to semiconductor regions, leading to inadequate performance improvement.
Innovation Solution
The semiconductor apparatus includes a silicon layer with distinct semiconductor regions, insulator films, and contact plugs with specific metal and silicide regions, where the thickness of conductor portions and silicide regions are optimized to reduce contact resistance and improve electrical properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the contact plug structure is simplified, then the manufacturing process is easier, but the electrical properties and performance are insufficient
Solution Approach 1:
The contact plug is segmented into multiple functional layers: a silicide region at the bottom for low contact resistance, a conductor portion in the middle for electrical conduction, and a metal portion at the top for connection to upper layers. This segmentation allows each layer to be optimized for its specific function, achieving both manufacturability and superior electrical properties.
Solution Approach 2:
Different regions of the contact plug have different material compositions and thicknesses tailored to local requirements. The silicide region provides low contact resistance at the semiconductor interface, while the upper metal portion provides good conductivity and connection. This local optimization resolves the contradiction between simple manufacturing and high performance.
2Reliability
If the thickness of conductor and silicide regions is increased, then contact resistance is reduced, but the manufacturing precision requirements increase
Solution Approach 1:
The silicide region is formed first through a preliminary silicidation process before the conductor and metal portions are deposited. This preliminary action establishes a low-resistance foundation that compensates for variations in subsequent layer thicknesses, reducing the overall sensitivity to manufacturing precision while achieving low contact resistance.
Solution Approach 2:
The contact plug uses a composite structure with multiple materials (silicide, conductor material, metal material) each with different properties. This composite approach allows the system to achieve low contact resistance through the silicide region while the upper layers provide structural stability and connection, reducing the impact of thickness variations on overall performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the electrical properties of contact plugs, reducing resistance variations and improving the performance of semiconductor apparatuses by optimizing the thickness of conductor and silicide regions, thereby increasing signal read-out speed and operational efficiency.
Implementation Method 1
forming a first conductor film in a first hole formed in the insulator film on the first semiconductor region by one of physical vapor deposition and chemical vapor deposition
Implementation Method 2
forming a first conductor film in a first hole formed in the insulator film on the first semiconductor region by one of physical vapor deposition and chemical vapor deposition
Implementation Method 3
forming a second conductor film in the first hole by the other of the physical vapor deposition and the chemical vapor deposition
Implementation Method 4
forming a second conductor film in the first hole by the other of the physical vapor deposition and the chemical vapor deposition
Implementation Method 5
forming a metal film in the first hole in which the first conductor film and the second conductor film are formed
Implementation Method 6
forming a metal film in the first hole in which the first conductor film and the second conductor film are formed
Implementation Method 7
forming a third conductor film in a second hole formed in the insulator film on the silicide region so as to be brought into contact with the silicide region by chemical vapor deposition
Data Source
AI summary
A semiconductor apparatus includes a silicon layer including first and second semiconductor regions; an insulator film, on the silicon layer, having first and second holes positioned on the first and second semiconductor regions; a first metal portion containing a first metal element in the first hole; a first conductor portion containing a second metal element between the first metal portion and the first semiconductor region; a first silicide region containing the second metal element between the first conductor portion and the first semiconductor region; a second metal portion containing the first metal element in the second hole; a second conductor portion containing the second metal element between the second metal portion and the second semiconductor region; and a second silicide region containing a third metal element between the second conductor portion and the second semiconductor region, wherein the first conductor portion thickness is greater than the second conductor portion thickness.