Semiconductor Contact Structure With Protective Layer Against Leakage
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Solution Overview
Problem
In the manufacturing of semiconductor structures, particularly in DRAMs, charge leakage and pattern breakage occur due to the absence or incomplete protective layers between metal elements like tungsten, leading to electric leakage and reduced yield.
Innovation Solution
A method involving the formation of a semiconductor structure with a protective layer wrapping the sidewall and bottom wall of a conductive portion, preventing metal residues and enhancing etching parameters to avoid short circuits and improve performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a large quantity of small-sized array patterns are etched to achieve high integration and high density, then the semiconductor structure becomes finer with more dense repetitive patterns, but charge leakage and pattern breakage occur reducing performance and yield
Solution Approach 1:
A protective layer is formed on the sidewalls and bottom walls of conductive portions (such as tungsten plugs) before the etching process. This preliminary protective coating prevents charge leakage and pattern breakage during subsequent etching operations, enabling high-density patterning while maintaining manufacturing reliability
Solution Approach 2:
The protective layer acts as an intermediary between the conductive portion and the etching environment. It provides a protective interface that prevents direct interaction between the conductive material and the etching chemicals, thereby preventing charge leakage and pattern breakage while allowing the etching process to proceed
2Ease of manufacture
If protective layers are absent or incomplete between metal elements, then the manufacturing process is simpler, but electric leakage occurs reducing yield
Solution Approach 1:
The protective layer is applied locally only where needed - specifically on the sidewalls and bottom walls of conductive portions that are susceptible to charge leakage. This localized approach provides targeted protection against electric leakage while minimizing additional process complexity and maintaining ease of manufacture
Data Source
AI summary
The present disclosure discloses a method of manufacturing a semiconductor structure and a semiconductor structure, and relates to the technical field of semiconductors. The method includes: providing a base, active regions arranged at intervals along a first direction being arranged in the base; forming, on the base, bit line structures arranged at intervals; forming a contact structure between two adjacent ones of the bit line structures; forming a barrier structure on the contact structure, the barrier structures being arranged in correspondence with and connected to the bit line structure, and a first recess being formed between any adjacent barrier structures; and forming a conductive structure in the first recess, the conductive structure including a protective layer and a conductive portion, and the protective layer wrapping a sidewall and a bottom wall of the conductive portion.