Semiconductor Contact Resistance Reduction via Multi-Point Coupling
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Solution Overview
Problem
As semiconductor device structures shrink, the size of contacts decreases, reducing the contact area and increasing resistance between contacts and device structures, which hampers signal flow in semiconductor devices like CMOS transistors.
Innovation Solution
The method involves forming semiconductor devices with contacts that are electrically and physically coupled to both surface and sidewall portions of the device structures, using a process that includes depositing dielectric material, selectively etching openings through the ILD layer, and filling these openings with conductive material to increase the contact area without enlarging the contacts.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the size of semiconductor device structures is reduced to increase device density, then device integration is improved, but contact area is reduced and contact resistance increases
Solution Approach 1:
The contact structure transitions from a conventional planar contact to a multi-dimensional structure that contacts the semiconductor device structure at multiple locations. The contact includes a first contact portion contacting a first location and a second contact portion contacting a second location on the semiconductor device structure, effectively adding spatial dimensions to the contact interface and increasing total contact area without increasing contact footprint.
Solution Approach 2:
The contact is divided into multiple distinct contact portions (first contact portion and second contact portion) that contact the semiconductor device structure at different locations. This segmentation allows the contact to distribute its connection points across multiple areas, increasing the effective contact area while maintaining a compact overall contact structure.
2Area of moving object
If contact size is reduced to maintain device scaling, then device density is improved, but contact area decreases and resistance increases
Solution Approach 1:
The contact structure utilizes multiple vertical and lateral positions to contact the semiconductor device structure. By having contact portions at different heights and locations (first contact portion at first location, second contact portion at second location), the structure increases its effective contact area without increasing its planar footprint.
Solution Approach 2:
Different portions of the contact structure have different contact characteristics. The first contact portion and second contact portion contact the semiconductor device structure at different locations with potentially different contact areas and resistance characteristics, allowing optimization of local contact quality while maintaining overall small footprint.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces contact resistance by increasing the contact area between the contacts and the semiconductor device structures, thereby improving signal flow efficiency without increasing the size of the contacts.
Implementation Method 1
depositing dielectric material to form an interlayer dielectric (ILD) layer over the semiconductor device structure
Data Source
AI summary
Semiconductor devices having improved contact resistance and methods for fabricating such semiconductor devices are provided. These semiconductor devices include a semiconductor device structure and a contact. The contact is electrically and physically coupled to the semiconductor device structure at both a surface portion and a sidewall portion of the semiconductor device structure.