Semiconductor Contact Rods for Reduced Radiation Absorption

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Solution Overview

Problem

Existing methods for producing electrical contacts on semiconductor layers often result in significant radiation absorption losses and uneven charge carrier distribution, particularly in optoelectronic components like light-emitting diodes, due to the use of transparent conductive oxides.

Innovation Solution

A method involving the formation of metallic contact rods outside the semiconductor layer, with a filling layer and a contact layer that minimizes absorption losses by allowing for efficient charge carrier distribution, using self-organized structures and materials like metals and transparent conductive oxides, and electrodeposition for precise control of contact rod thickness and placement.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If transparent conductive oxides are used for electrical contact, then electrical contact is achieved, but radiation absorption losses increase

Engineering Contradiction:
Improveelectrical contactVSAvoidradiation absorption losses
Core Design Contradiction:
ReliabilityVSLoss of energy

Solution Approach 1:

The contact structure is segmented into multiple discrete contact rods arranged in an array, rather than using a continuous transparent conductive oxide layer. This segmentation allows for reduced material usage and optimized radiation transmission paths.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The invention changes the material parameter from transparent conductive oxide to metal-based contact rods, fundamentally altering the electrical and optical properties to achieve lower radiation absorption while maintaining electrical conductivity.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If transparent conductive oxides are used for electrical contact, then electrical contact is established, but charge carrier distribution becomes uneven

Engineering Contradiction:
Improveelectrical contactVSAvoidcharge carrier distribution uniformity
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The contact rods are strategically positioned and sized to create localized contact points that distribute charge carriers more uniformly across the semiconductor layer, with each contact rod serving as a discrete current injection point.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The contact structure transitions from a two-dimensional continuous layer to a three-dimensional array of vertical rods, enabling better control over charge carrier distribution through vertical current paths and improved lateral spreading.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Loss of energy

If contact rods are formed outside the semiconductor layer, then radiation absorption is reduced, but electrical contactability must be maintained

Engineering Contradiction:
Improveradiation absorptionVSAvoidelectrical contactability
Core Design Contradiction:
Loss of energyVSReliability

Solution Approach 1:

An intermediate layer is introduced between the metal contact rods and the semiconductor layer, serving as a mediator that ensures reliable electrical contact while allowing the metal rods to remain positioned outside the active semiconductor region for optimized optical performance.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach reduces radiation absorption and enhances charge carrier distribution, enabling high-efficiency radiation generation or reception in semiconductor components while maintaining good electrical contactability.

Implementation Method 1

The contact rods are formed expediently to be electrically conductive and electrically connected to the semiconductor layer

Methodology Applied
Scientific EffectElectrical conduction: Conduction (electrical)

Implementation Method 2

electrodeposition for precise control of contact rod thickness and placement

Methodology Applied
Scientific EffectElectrodeposition: Electrodeposition

Data Source

PatentUS10854784B2Method for establishing electrical contact of a semiconductor layer and semiconductor component having electrical contact
Publication Date: 2020.12.01 OSRAM OLED
  • US10854784B2 patent drawing
  • US10854784B2 patent drawing
  • US10854784B2 patent drawing

AI summary

A method for producing an electrical contact on a semiconductor layer and a semiconductor component having an electrical contact are disclosed. In an embodiment a method includes providing a semiconductor layer, forming a plurality of contact rods on the semiconductor layer, wherein the contact rods are formed by a first material and a second material, wherein the first material is applied to the semiconductor layer and the second material is applied to the first material, and wherein a lateral structure of the first material is self-organized, forming a filling layer on the contact rods and in intermediate spaces between the contact rods and exposing the contact rods.