Semiconductor Contact Rods for Reduced Radiation Absorption
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing methods for producing electrical contacts on semiconductor layers often result in significant radiation absorption losses and uneven charge carrier distribution, particularly in optoelectronic components like light-emitting diodes, due to the use of transparent conductive oxides.
Innovation Solution
A method involving the formation of metallic contact rods outside the semiconductor layer, with a filling layer and a contact layer that minimizes absorption losses by allowing for efficient charge carrier distribution, using self-organized structures and materials like metals and transparent conductive oxides, and electrodeposition for precise control of contact rod thickness and placement.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If transparent conductive oxides are used for electrical contact, then electrical contact is achieved, but radiation absorption losses increase
Solution Approach 1:
The contact structure is segmented into multiple discrete contact rods arranged in an array, rather than using a continuous transparent conductive oxide layer. This segmentation allows for reduced material usage and optimized radiation transmission paths.
Solution Approach 2:
The invention changes the material parameter from transparent conductive oxide to metal-based contact rods, fundamentally altering the electrical and optical properties to achieve lower radiation absorption while maintaining electrical conductivity.
2Reliability
If transparent conductive oxides are used for electrical contact, then electrical contact is established, but charge carrier distribution becomes uneven
Solution Approach 1:
The contact rods are strategically positioned and sized to create localized contact points that distribute charge carriers more uniformly across the semiconductor layer, with each contact rod serving as a discrete current injection point.
Solution Approach 2:
The contact structure transitions from a two-dimensional continuous layer to a three-dimensional array of vertical rods, enabling better control over charge carrier distribution through vertical current paths and improved lateral spreading.
3Loss of energy
If contact rods are formed outside the semiconductor layer, then radiation absorption is reduced, but electrical contactability must be maintained
Solution Approach 1:
An intermediate layer is introduced between the metal contact rods and the semiconductor layer, serving as a mediator that ensures reliable electrical contact while allowing the metal rods to remain positioned outside the active semiconductor region for optimized optical performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces radiation absorption and enhances charge carrier distribution, enabling high-efficiency radiation generation or reception in semiconductor components while maintaining good electrical contactability.
Implementation Method 1
The contact rods are formed expediently to be electrically conductive and electrically connected to the semiconductor layer
Implementation Method 2
electrodeposition for precise control of contact rod thickness and placement
Data Source
AI summary
A method for producing an electrical contact on a semiconductor layer and a semiconductor component having an electrical contact are disclosed. In an embodiment a method includes providing a semiconductor layer, forming a plurality of contact rods on the semiconductor layer, wherein the contact rods are formed by a first material and a second material, wherein the first material is applied to the semiconductor layer and the second material is applied to the first material, and wherein a lateral structure of the first material is self-organized, forming a filling layer on the contact rods and in intermediate spaces between the contact rods and exposing the contact rods.


