Semiconductor Contact Structure With Self-Formed Barrier Feature
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Solution Overview
Problem
Current semiconductor device manufacturing faces challenges in achieving optimal dimensions and power efficiency due to issues with contact opening features and barrier formation, which affect the performance and resistance of semiconductor devices.
Innovation Solution
A method for forming semiconductor devices involves forming a conductive element that reacts with dielectric layers to create a barrier feature, reducing space occupation and interface resistance, and using a hybrid conductive structure with a first metal and a second metal alloy to enhance conductivity and electromigration properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional barrier layer is deposited in the contact opening feature, then the barrier layer occupies space in the contact opening feature, but this reduces the volume available for subsequently formed metal leading to higher resistance
Solution Approach 1:
The conductive element is configured to react with the dielectric layer to self-form the barrier feature through chemical reaction, eliminating the need for separate barrier layer deposition processes. This self-service approach allows the barrier feature to form in-situ without occupying additional process space or time, thereby preserving maximum volume for the subsequently formed metal while still providing the necessary barrier function.
Solution Approach 2:
The conductive element is positioned and configured in advance to react with the dielectric layer, performing the barrier formation action before the subsequent metal is formed. This preliminary action ensures that the barrier feature is already in place when the metal is deposited, optimizing the interface between barrier and metal while maximizing the volume available for conductive metal formation.
2Reliability
If a conventional barrier layer is deposited, then the barrier layer is formed, but an interface between the barrier layer and conductive structure is formed leading to increased resistance
Solution Approach 1:
The barrier feature is self-formed through chemical reaction between the conductive element and dielectric layer, creating a direct metallurgical bond without requiring a separate interface. This self-service mechanism eliminates the distinct barrier layer interface that would otherwise exist between deposited barrier and conductive structure, thereby reducing interface resistance and improving contact reliability.
Solution Approach 2:
The conductive element is configured as a composite structure with a first metal and a second metal alloy, where the second metal reacts with the dielectric layer to form the barrier feature. This composite material approach creates a gradient structure that transitions smoothly from the conductive element to the dielectric layer, improving interface quality and reducing resistance compared to conventional discrete barrier layer deposition.
3Reliability
If the conductive element is formed with a hybrid metal structure, then conductivity and electromigration properties are enhanced, but the device structure becomes more complex
Solution Approach 1:
The conductive element employs a hybrid metal structure comprising a first metal providing high conductivity and a second metal alloy providing enhanced electromigration resistance. This composite material configuration optimizes both electrical performance and structural stability, achieving superior reliability despite the increased material complexity.
Solution Approach 2:
The hybrid metal structure is configured with different metals in specific locations within the conductive element, with the second metal alloy positioned to react with the dielectric layer and form the barrier feature. This local quality approach ensures that each metal performs its optimal function: the first metal provides bulk conductivity while the second metal provides interface stability and electromigration resistance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the performance of semiconductor devices by reducing resistance and optimizing space usage within the contact opening features and via holes, leading to better conductivity and reliability.
Implementation Method 1
the conductive element reacts with the dielectric layer to form a barrier feature
Data Source
AI summary
A semiconductor device includes a dielectric structure, a conductive structure disposed in the dielectric structure, a first dielectric feature disposed over the dielectric structure, a conductive element disposed in the first dielectric feature and connected to the conductive structure, and a barrier feature disposed around the conductive element and disposed outside of the conductive structure.