Semiconductor Contact Formation to Suppress Silicon Pit Leakage
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Solution Overview
Problem
The generation of silicon pits during the manufacturing process of semiconductor devices leads to defective products due to the removal of damage layers on the semiconductor substrate, which causes leakage currents and reduced VF characteristics.
Innovation Solution
A manufacturing method that leaves a damage layer on the semiconductor substrate surface to suppress the formation of silicon pits by selectively removing the interlayer insulating film, thereby forming a metal film and controlling the damage layer's removal to maintain the integrity of the semiconductor device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the damage layer is removed to reduce surface damages from dry etching, then surface quality is improved, but silicon pits are generated in subsequent steps
Solution Approach 1:
The patent applies preliminary action by forming a protective film before the dry etching process. This protective film is selectively removed after etching to reveal the contact hole, preventing silicon pit generation while maintaining surface quality. The protective film acts as a sacrificial layer that protects the semiconductor substrate during subsequent processing steps.
Solution Approach 2:
The patent uses an intermediary substance (protective film) that mediates between the dry etching process and the semiconductor substrate. This film absorbs the harmful effects of the etching process and prevents direct damage to the substrate, thereby eliminating silicon pit formation while allowing the etching to proceed effectively.
2Reliability
If the damage layer is removed to improve contact properties, then electrical contact is enhanced, but leakage currents increase due to silicon pits
Solution Approach 1:
The protective film is formed in advance before contact hole formation, preventing silicon pit generation that would cause leakage currents. This preliminary protective action ensures that when the contact hole is eventually formed, the surrounding substrate remains intact and free from defects that would create leakage paths.
Solution Approach 2:
The patent converts the potentially harmful effect of aggressive etching (which could create silicon pits) into a beneficial process by using the protective film to enable more effective etching without damage. The film allows the etching to proceed thoroughly for good contact properties while preventing the harmful side effect of silicon pit formation and associated leakage currents.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method prevents the formation of silicon pits, enhances VF characteristics, and improves the reliability of semiconductor devices by reducing leakage currents and maintaining optimal electrical performance.
Implementation Method 1
an interlayer insulating film is selectively removed
Implementation Method 2
leaving a damage layer on the surface of the semiconductor substrate in order to suppress the generating of the silicon pits
Data Source
AI summary
A method of manufacturing a semiconductor device is provided, the method including: forming an insulating film on a semiconductor substrate; selectively removing the insulating film; forming a metal film on the semiconductor substrate by leaving a damage layer of a surface of the semiconductor substrate, the damage layer being generated when the insulating film is selectively removed; forming an electrode by selectively removing the metal film; and forming polyimide on the electrode. The damage layer of the surface of the semiconductor substrate, which is generated when the insulating film is selectively removed, may be selectively removed.