Semiconductor Contact Structure for Integration Density
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Solution Overview
Problem
The integration density of semiconductor memory devices is limited by expensive process equipment, hindering the achievement of higher integration and lower costs, which are essential for meeting consumer demands for superior performance and affordability.
Innovation Solution
A semiconductor device design featuring a substrate with a groove and device isolation layer exposing an active region, along with a contact structure that fills a gap region delimited by the device isolation layer, allowing for improved electrical connections and integration density without the need for costly equipment upgrades.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If expensive process equipment is used to increase pattern fineness, then integration density is improved, but manufacturing cost increases
Solution Approach 1:
The contact structure extends in the vertical dimension by having a first portion filling the gap region between the device isolation layer sidewall and active region top surface, and a second portion overlapping the device isolation layer in plan view. This vertical extension allows improved electrical connection without requiring more expensive lateral patterning equipment
Solution Approach 2:
The contact structure is divided into two distinct portions: a first portion that fills the gap region and contacts the device isolation layer sidewall, and a second portion that overlaps the device isolation layer. This segmentation allows each portion to serve specific functions - the first portion provides mechanical support and electrical connection to the active region, while the second portion establishes connection to upper conductive layers
2Reliability
If contact area is increased to reduce contact resistance, then electrical characteristics are improved, but device area increases
Solution Approach 1:
The contact structure utilizes the vertical dimension to increase effective contact area without expanding the lateral device footprint. By extending the contact structure downward into the gap region and having it overlap the device isolation layer in plan view, the patent achieves improved electrical connection while maintaining compact lateral dimensions
3Object-generated harmful factors
If device isolation layer height is increased to improve electrical isolation, then leakage current is reduced, but manufacturing complexity increases
Solution Approach 1:
The device isolation layer is positioned strategically to expose the active region while maintaining appropriate height to provide electrical isolation. The contact structure is locally adapted to fill the gap region created by this isolation layer configuration, ensuring proper electrical connection without requiring complex manufacturing processes throughout the entire device
Data Source
AI summary
According to example embodiments, a semiconductor device may include a substrate having an upper surface defining a groove and an active region, a device isolation layer in the groove, and a contact structure on the active region. The device isolation exposes the active region and may have a top surface that is higher than a top surface of the active region. The contact structure may include a first portion filling a gap region delimited by a sidewall of the device isolation layer and the top surface of the active region, the contact structure may include and a second portion on the device isolation layer so the second portion overlaps with the device isolation layer in a plan view.