Semiconductor Contact Layer Work-Function Matching for Low Resistance
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Solution Overview
Problem
Current semiconductor light-emitting devices face challenges in optimizing contact resistivity and process stability, particularly in the design and manufacturing of semiconductor structures with metal elements, which affect the efficiency and reliability of optoelectronic devices like LEDs and solar cells.
Innovation Solution
The semiconductor device incorporates a specific structure with a first semiconductor layer, a second semiconductor layer, an active region, and metal element-containing structures, where the work function of the metal elements is carefully aligned with the conduction and valence band edges to improve contact resistivity and stability, and includes a p-type or n-type layer that reduces energy barriers and prevents light absorption, along with an insulating structure and electrode pads for enhanced electrical connection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a metal element directly contacts the semiconductor layer, then electrical connectivity is improved, but contact resistivity increases and interfacial compound formation occurs
Solution Approach 1:
A metal element-containing layer is introduced as an intermediary between the semiconductor layer and the metal element. This intermediate layer has a work function that satisfies specific conditions (WF1 > (Ec+Ev)/2 for n-type semiconductor) to reduce contact resistivity and prevent harmful interfacial compound formation, while still enabling effective electrical connectivity.
2Reliability
If the metal element directly contacts the semiconductor layer, then device performance is improved, but stability decreases
Solution Approach 1:
The metal element-containing layer serves as a stable intermediary that prevents direct interaction between the metal element and semiconductor layer that would lead to unstable interfacial compounds. The work function condition (WF1 > (Ec+Ev)/2) ensures compositional stability at the interface while maintaining electrical performance.
3Use of energy by moving object
If the metal element directly contacts the semiconductor layer, then energy transfer is improved, but light absorption increases
Solution Approach 1:
The metal element-containing layer with its specific work function properties acts as an intermediary that facilitates efficient energy transfer from the semiconductor to the metal element while preventing direct contact that would cause light absorption. The work function condition ensures optimal energy alignment without creating harmful optical absorption interfaces.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the optical-electrical characteristics of the semiconductor device, improving contact resistance and process stability, leading to more efficient light emission and device reliability across various applications, including illumination, medical, and display systems.
Implementation Method 1
the second material has a work function WF1, when the first semiconductor layer is of an n-type conductivity, the work function WF1 fulfills WF1>(Ec+Ev)/2
Data Source
AI summary
The present disclosure provides a semiconductor device including a semiconductor structure, a first metal element-containing structure, and a layer. The semiconductor structure includes a first semiconductor layer having a first material, a second semiconductor layer, an active region between the first semiconductor layer and the second semiconductor layer. The first metal element-containing structure is located on the semiconductor structure and includes a first metal element. The layer has a second material and a second metal element and is located between the first semiconductor layer and the first metal element-containing structure. The first material has a conduction band edge Ec and a valence band edge Ev, and the second material has a work function WF1, when the first semiconductor layer is of an n-type conductivity, the work function WF1 fulfills WF1<(Ec+Ev)/2, and when the first semiconductor layer is of a p-type conductivity, the work function WF1 fulfills WF1>(Ec+Ev)/2.