Semiconductor Process Container Cleaning via HF and Alcohol

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Solution Overview

Problem

The existing methods for cleaning process containers after oxygen-containing film formation are inefficient, leading to residual deposits and prolonged cleaning processes.

Innovation Solution

A method involving continuous supply of hydrogen fluoride gas followed by alcohol into the process container without intermittent periods, enhancing the cleaning efficiency by accelerating the etching reaction and improving the removal of oxygen-containing film deposits.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If conventional cleaning methods are used after oxygen-containing film formation, then the process can be completed, but the cleaning efficiency is low and residual deposits remain

Engineering Contradiction:

Improvecleaning efficiencyVSAvoiddeposit removal completeness

Core Design Contradiction:

ProductivityVSManufacturing precision

Solution Approach 1:

The patent changes the chemical parameters of the cleaning process by introducing hydrogen fluoride gas and alcohol in a specific sequence without intermittent periods. This parameter change transforms the cleaning mechanism to achieve both high efficiency and complete deposit removal, resolving the contradiction between cleaning efficiency and deposit removal completeness.

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent implements continuous supply of hydrogen fluoride gas followed by alcohol without intermittent periods, maintaining the useful cleaning action continuously. This continuity prevents residual deposits from reforming and ensures complete removal while maintaining high cleaning efficiency throughout the process.

Inventive Principle:

Principle #20Continuity of useful action

2Manufacturing precision

If cleaning processes are extended to improve deposit removal, then completeness increases, but the cleaning time is prolonged

Engineering Contradiction:

Improvedeposit removal completenessVSAvoidcleaning time

Core Design Contradiction:

Manufacturing precisionVSLoss of time

Solution Approach 1:

By changing the chemical parameters to use hydrogen fluoride gas combined with alcohol in a continuous process, the patent achieves complete deposit removal in a shorter time. The chemical reactivity parameters are optimized to accelerate the cleaning reaction, eliminating the need for prolonged cleaning processes.

Inventive Principle:

Principle #35Parameter changes

3Productivity

If plasma cleaning is used to increase etching rate, then cleaning efficiency improves, but equipment damage and costs increase

Engineering Contradiction:

Improveetching rateVSAvoidplasma damage to equipment

Core Design Contradiction:

ProductivityVSObject-affected harmful factors

Solution Approach 1:

The patent replaces the plasma-based cleaning mechanism with a chemical gas-phase reaction system using hydrogen fluoride and alcohol. This substitution eliminates the harmful plasma effects on equipment while maintaining high etching rates through chemical reaction control, resolving the contradiction between cleaning efficiency and equipment safety.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach significantly increases the etching rate, reduces the cleaning time, and simplifies the process by operating under non-plasma conditions, thereby reducing costs and preventing plasma damage to equipment.

Implementation Method 1

supplying at least a hydrogen fluoride gas into the process container... significantly increases the etching rate

Methodology Applied

Scientific EffectEtching reaction: Chemical Bonding

Implementation Method 2

supplying an alcohol into the process container... improving the removal of oxygen-containing film deposits

Methodology Applied

Scientific EffectEvaporation: Evaporation

Data Source

PatentUS10156012B2Cleaning method, method of manufacturing semiconductor device, substrate processing apparatus, and a non-transitory computer-readable recording medium

Publication Date: 2018.12.18 CENT GLASS CO LTD

AI summary

There is provided a cleaning method improving cleaning efficiency in a process container after an oxygen-containing film forming process is having performed, including: (a) supplying at least a hydrogen fluoride gas into the process container; and (b) supplying an alcohol into the process container in a state where supply of the hydrogen fluoride gas into the process container is stopped, wherein (a) and (b) are continuously performed without providing an intermittent period therebetween.