Semiconductor Process Container Inert Gas Flow Control
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Solution Overview
Problem
The generation of foreign matter in a process container during semiconductor device manufacturing due to reaction by-products and adsorption layers on the container walls reduces film quality and process efficiency.
Innovation Solution
A technique involving the sequential supply of a source gas and reactive gases to a substrate, accompanied by the controlled flow of inert gases to the container walls, where an inert gas is supplied at a higher flow rate initially to prevent adsorption layer formation and then at a lower flow rate to facilitate oxidation, and at higher flow rates during loading/unloading to prevent moisture contact.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a source gas is supplied to a substrate in a process container, then a film can be formed on the substrate, but foreign matter (particles) is generated due to reaction by-products attached onto the process container
Solution Approach 1:
The patent applies inert atmosphere by supplying an inert gas (such as nitrogen or argon) to the inner wall of the process container opening during film formation. This creates a protective inert environment that prevents reactive gases from contacting and reacting with the container wall surfaces, thereby preventing the formation of reaction by-products and foreign matter particles that would otherwise contaminate the film
Solution Approach 2:
The patent implements preliminary action by supplying inert gas to the process container opening before and during the film formation process. This preliminary protective measure ensures that the container wall surfaces are already protected by the inert atmosphere before reactive gases are introduced, preventing the formation of adsorption layers and reaction by-products that would generate foreign matter
2Manufacturing precision
If the inert gas flow rate is increased to suppress foreign matter generation, then film quality improves, but gas consumption and process complexity increase
Solution Approach 1:
The patent applies local quality by directing the inert gas specifically to the inner wall of the process container opening rather than uniformly distributing it throughout the entire process chamber. This localized application of inert atmosphere provides targeted protection where it is most needed (at the opening where foreign matter enters) while minimizing inert gas consumption and avoiding interference with the film formation process on the substrate
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively suppresses the generation of foreign matter, improves film quality, reduces maintenance frequency, and enhances productivity by maintaining the integrity of the container surfaces and preventing corrosion.
Implementation Method 1
supplying an inert gas to an inner wall of an opening of the process container at a first flow rate while performing the step (a)
Implementation Method 2
supplying a source gas to a substrate in a process container; supplying a reactive gas to the substrate
Implementation Method 3
supplying the inert gas to the inner wall at a second flow rate lower than the first flow rate while performing the step (c)
Data Source
AI summary
A technique capable of suppressing the generation of foreign matter in a process container involves a method of manufacturing a semiconductor device including: (a) supplying a source gas to a substrate in a process container; (b) supplying an inert gas to an inner wall of an opening of the process container at a first flow rate while performing (a); (c) supplying a reactive gas to the substrate; and (d) supplying the inert gas to the inner wall at a second flow rate lower than the first flow rate while performing (c).