Semiconductor Process Container Radical Cleaning
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Solution Overview
Problem
Current semiconductor processing methods face challenges in reliably removing metal contaminants from the inner surfaces of processing equipment without incurring significant facility costs, as existing cleaning processes either inadequately remove contaminants or require additional costly infrastructure.
Innovation Solution
A method involving the supply of oxidizing and reducing gases to react and generate radicals within the process container, which effectively removes contaminants from the inner surfaces without the need for new gas supply circuits or significant facility upgrades.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If hydrogen gas or halogen compound is supplied to remove metal contaminants from quartz components, then metal contamination on wafers is reduced, but facility cost increases due to required new gas supply circuits
Solution Approach 1:
The patent makes the existing process gas supply circuits perform dual functions: supplying process gases during semiconductor manufacturing and supplying cleaning gases (hydrogen, oxygen, or halogen compounds) during cleaning cycles. This eliminates the need for separate cleaning gas supply circuits, thereby reducing facility cost while maintaining effective metal contaminant removal capability
Solution Approach 2:
The cleaning system utilizes the existing gas supply infrastructure to serve the cleaning function, making the system self-sufficient without requiring external dedicated cleaning equipment. The same gas circuits that serve manufacturing processes are repurposed to provide cleaning gases, reducing overall system dependency and cost
2Reliability
If cleaning process is performed regularly to remove metal contaminants from quartz components, then product quality is maintained, but processing time is consumed
Solution Approach 1:
The patent implements periodic cleaning cycles where cleaning gas is supplied at predetermined intervals during the manufacturing process. Instead of continuous cleaning, the system performs cleaning operations periodically when process conditions indicate contaminant accumulation, balancing product quality maintenance with efficient use of processing time
Solution Approach 2:
The cleaning process is performed preliminarily before metal contaminants can significantly affect product quality. By detecting early signs of contaminant accumulation and initiating cleaning before critical thresholds are reached, the system prevents quality degradation while minimizing total cleaning time required
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reliably decreases metal contamination, particularly copper, on component members, enhancing product throughput without increasing facility costs by utilizing existing gas supply infrastructure.
Implementation Method 1
causing the oxidizing gas and the reducing gas to react with each other within a first atmosphere that activates the oxidizing gas and the reducing gas inside the process container, thereby generating radicals
Implementation Method 2
supplying an oxidizing gas and a reducing gas into a process container... causing the oxidizing gas and the reducing gas to react with each other
Data Source
AI summary
A method for using a semiconductor processing apparatus includes supplying an oxidizing gas and a reducing gas into a process container of the processing apparatus accommodating no product target substrate therein; causing the oxidizing gas and the reducing gas to react with each other within a first atmosphere that activates the oxidizing gas and the reducing gas inside the process container, thereby generating radicals; and removing a contaminant from an inner surface of the process container by use of the radicals.