Semiconductor Package Containment Structure for 3D Integration
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Solution Overview
Problem
The semiconductor industry faces challenges in achieving high integration density and efficient electrical connections in 3D packaging due to limitations in current wafer level packaging methods, which affect the speed and bandwidth of semiconductor devices.
Innovation Solution
A manufacturing method involving a temporary carrier with a de-bonding layer, conductive elements, and a redistribution structure is used to form a semiconductor structure with a containment structure and pre-fill material, allowing for the stacking and electrical connection of semiconductor dies, and the formation of conductive terminals for enhanced connectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If wafer level packaging methods are used to achieve high integration density, then integration density improves, but manufacturing precision deteriorates due to pre-fill material overflow and connection reliability issues
Solution Approach 1:
The packaging structure is segmented into distinct functional zones: a first zone for semiconductor die attachment, a second zone for conductive terminal formation, and a third zone acting as a transition region. The containment structure further segments the pre-fill material confinement area, preventing material overflow into terminal formation zones and enabling high-density packaging while maintaining manufacturing precision.
Solution Approach 2:
The containment structure acts as an intermediary element between the pre-fill material and the conductive terminal formation area. This intermediate structure confines the pre-fill material to specific regions, preventing it from interfering with subsequent terminal formation processes, thus resolving the conflict between high integration density and manufacturing precision.
2Speed
If 3D stacking of semiconductor dies is implemented to increase bandwidth, then speed improves, but device complexity increases due to multiple interconnect layers
Solution Approach 1:
The patent transitions from planar 2D packaging to vertical 3D stacking architecture. Multiple semiconductor dies are stacked in the vertical dimension with conductive terminals and interconnect structures forming multiple layers, enabling increased bandwidth while managing complexity through systematic zone organization and containment structures.
Solution Approach 2:
The patent implements nested structures where containment structures are embedded within the package substrate, and multiple conductive terminal layers are nested vertically. Semiconductor dies are stacked with interconnect layers nested between them, creating a compact multi-layer architecture that increases bandwidth while organizing complexity in a systematic manner.
3Reliability
If conductive terminals are formed in the second zone to enhance connectivity, then electrical connection improves, but pre-fill material overflow occurs into the terminal formation area
Solution Approach 1:
The package substrate is segmented into distinct zones with the containment structure creating clear boundaries. The first zone contains pre-fill material for die attachment, while the second zone is dedicated to conductive terminal formation. This segmentation prevents pre-fill material overflow from contaminating the terminal formation area, ensuring reliable electrical connections.
Solution Approach 2:
The containment structure serves as an intermediary barrier that confines pre-fill material to the first zone. This intermediate structure prevents direct contact between pre-fill material and the second zone where conductive terminals are formed, eliminating material overflow issues while maintaining reliable electrical connections.
Data Source
AI summary
A semiconductor device and the manufacturing method thereof are provided. The semiconductor device includes a package structure, a first die, a first containment structure, a pre-fill layer, and a plurality of conductive terminals. The package structure includes an attach zone, a keep-out zone around the attach zone. The first die is disposed on the package structure in the attach zone and electrically connected to the package structure. The first containment structure is disposed within the keep-out zone of the package structure and surrounds the first die. The pre-fill layer is disposed between the package structure and the first die and between the first containment structure and the first die, where the pre-fill layer is constrained within the first containment structure. The conductive terminals are disposed on the package structure, distributed around the keep-out zone of the package structure, and electrically connected to the package structure.