Single Chamber Semiconductor Contaminant Removal via Remote Plasma
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Solution Overview
Problem
Existing methods for removing contaminants from semiconductor films are limited as they typically focus on either carbon-based or oxygen-based contaminants separately, failing to address both effectively due to equipment limitations.
Innovation Solution
A system and method utilizing a single processing chamber with a remote plasma unit capable of generating hydrogen and fluorine radicals, allowing for the simultaneous removal of both carbon-based and oxygen-based contaminants from semiconductor substrates, including silicon and silicon germanium, by using specific gas sources and radical generation techniques.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If separate processing chambers are used for removing carbon-based and oxygen-based contaminants, then each contaminant type can be effectively removed, but the device complexity and processing time increase
Solution Approach 1:
The patent combines two separate processing chambers into a single chamber that can sequentially perform both carbon-based contaminant removal (using hydrogen plasma) and oxygen-based contaminant removal (using fluorine plasma). This merging maintains the effectiveness of separate processing while reducing device complexity and processing time.
Solution Approach 2:
The single processing chamber is designed with multi-functionality, capable of performing different contaminant removal processes by switching between hydrogen plasma and fluorine plasma modes. This universal chamber replaces the need for dedicated separate chambers for each contaminant type.
2Reliability
If multiple processing steps are performed in sequence, then both carbon-based and oxygen-based contaminants can be removed, but the processing time increases
Solution Approach 1:
The patent implements continuous processing by seamlessly transitioning between hydrogen plasma and fluorine plasma modes within the same chamber without requiring chamber evacuation or reconfiguration. This continuous action removes both contaminant types in one uninterrupted sequence, minimizing total processing time.
Solution Approach 2:
The carbon-based contaminant removal using hydrogen plasma is performed first as a preliminary step, preparing the surface for the subsequent oxygen-based contaminant removal using fluorine plasma. This preliminary action ensures that both contaminants are removed efficiently in the correct sequence within a single chamber.
3Device complexity
If a single processing chamber is used, then device complexity is reduced, but the capability to effectively remove both contaminant types is compromised
Solution Approach 1:
The patent changes operational parameters (gas composition, plasma power, pressure) within the single chamber to optimize for different contaminant types. By switching between hydrogen-rich and fluorine-rich plasma conditions, the chamber maintains effective removal capability for both carbon-based and oxygen-based contaminants despite having only one chamber.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Effectively cleans semiconductor substrates by converting and sublimating contaminants, ensuring a clean surface for epitaxial processes, enhancing the mechanical and electrical properties of semiconductor devices.
Implementation Method 1
a single processing chamber with a remote plasma unit capable of generating hydrogen and fluorine radicals
Implementation Method 2
a single processing chamber with a remote plasma unit capable of generating hydrogen and fluorine radicals
Implementation Method 3
Effectively cleans semiconductor substrates by converting and sublimating contaminants
Implementation Method 4
Effectively cleans semiconductor substrates by converting and sublimating contaminants
Data Source
AI summary
A system and method for removing both carbon-based contaminants and oxygen-based contaminants from a semiconductor substrate within a single process chamber is disclosed. The invention may comprise utilization of remote plasma units and multiple gas sources to perform the process within the single process chamber.